登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Kaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleElectrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsKaneko, M.Author
Hashizume, T.Author
Odnoblyudov, V. A.Author
Tu, C. W.Author
Year2007 (May 15)Volume101
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2732451Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5145331Long-form Identifiermindat:1:5:5145331:4
GUID0
Full ReferenceKaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451
Plain TextKaneko, M., Hashizume, T., Odnoblyudov, V. A., Tu, C. W. (2007) Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103707pp. doi:10.1063/1.2732451
In(2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Odnoblyudov, V. A., Tu, C. W. (2006) Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy. Applied Physics Letters, 89 (11). 111922pp. doi:10.1063/1.2345025
Lew, A. Y., Yan, C. H., Tu, C. W., Yu, E. T. (1995) Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 67 (7). 932-934 doi:10.1063/1.114699
Bi, W. G., Tu, C. W. (1995) Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas‐source molecular beam epitaxy. Journal of Applied Physics, 78 (4). 2889-2891 doi:10.1063/1.360032
Yu, K. M., Kudrawiec, R., Luce, A. V., Ting, M., Walukiewicz, W., Tu, C. W. (2013) GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy. Applied Physics Letters, 102 (11). 112105pp. doi:10.1063/1.4795782
Liang, B. W., Lee, P. Z., Shih, D. W., Tu, C. W. (1992) Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature. Applied Physics Letters, 60 (17). 2104-2106 doi:10.1063/1.107103
Xin, H. P., Tu, C. W., Geva, M. (1999) Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy. Applied Physics Letters, 75 (10). 1416-1418 doi:10.1063/1.124711
Izadifard, M., Mtchedlidze, T., Vorona, I., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2005) Band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. Applied Physics Letters, 86 (26). 261904pp. doi:10.1063/1.1952586
Liang, B. W., Tu, C. W. (1993) A kinetic model for As and P incorporation behaviors in GaAsP grown by gas‐source molecular beam epitaxy. Journal of Applied Physics, 74 (1). 255-259 doi:10.1063/1.354155
Xin, H. P., Tu, C. W. (1998) GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy. Applied Physics Letters, 72 (19). 2442-2444 doi:10.1063/1.121378
Hou, H. Q., Tu, C. W. (1992) Insitucontrol of As composition in InAsP and InGaAsP grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 60 (15). 1872-1874 doi:10.1063/1.107139
Izadifard, M., Bergman, J. P., Chen, W. M., Buyanova, I. A., Hong, Y. G., Tu, C. W. (2006) Photoluminescence upconversion in GaInNP∕GaAs heterostructures grown by gas source molecular beam epitaxy. Journal of Applied Physics, 99 (7). 73515pp. doi:10.1063/1.2188087
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 12:21:58
Go to top of page