Miao, M. S., Lambrecht, Walter R. L. (2007) Electronic structure of 3C inclusions in 4H SiC. Journal of Applied Physics, 101 (10). 103711pp. doi:10.1063/1.2732414
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Electronic structure of 3C inclusions in 4H SiC | ||
| Journal | Journal of Applied Physics | ||
| Authors | Miao, M. S. | Author | |
| Lambrecht, Walter R. L. | Author | ||
| Year | 2007 (May 15) | Volume | 101 |
| Issue | 10 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2732414Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5145303 | Long-form Identifier | mindat:1:5:5145303:1 |
| GUID | 0 | ||
| Full Reference | Miao, M. S., Lambrecht, Walter R. L. (2007) Electronic structure of 3C inclusions in 4H SiC. Journal of Applied Physics, 101 (10). 103711pp. doi:10.1063/1.2732414 | ||
| Plain Text | Miao, M. S., Lambrecht, Walter R. L. (2007) Electronic structure of 3C inclusions in 4H SiC. Journal of Applied Physics, 101 (10). 103711pp. doi:10.1063/1.2732414 | ||
| In | (2007, May) Journal of Applied Physics Vol. 101 (10) AIP Publishing | ||
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