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Zhao, Chao, Chen, Yonghai, Xu, Bo, Tang, Chenguang, Wang, Zhanguo (2009) Morphology and wetting layer properties of InAs/GaAs nanostructures. physica status solidi (c), 6 (4). 789-792 doi:10.1002/pssc.200880578

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Reference TypeJournal (article/letter/editorial)
TitleMorphology and wetting layer properties of InAs/GaAs nanostructures
Journalphysica status solidi (c)
AuthorsZhao, ChaoAuthor
Chen, YonghaiAuthor
Xu, BoAuthor
Tang, ChenguangAuthor
Wang, ZhanguoAuthor
Year2009 (April)Volume6
Issue4
PublisherWiley
DOIdoi:10.1002/pssc.200880578Search in ResearchGate
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Mindat Ref. ID5118364Long-form Identifiermindat:1:5:5118364:6
GUID0
Full ReferenceZhao, Chao, Chen, Yonghai, Xu, Bo, Tang, Chenguang, Wang, Zhanguo (2009) Morphology and wetting layer properties of InAs/GaAs nanostructures. physica status solidi (c), 6 (4). 789-792 doi:10.1002/pssc.200880578
Plain TextZhao, Chao, Chen, Yonghai, Xu, Bo, Tang, Chenguang, Wang, Zhanguo (2009) Morphology and wetting layer properties of InAs/GaAs nanostructures. physica status solidi (c), 6 (4). 789-792 doi:10.1002/pssc.200880578
In(2009, April) physica status solidi (c) Vol. 6 (4) Wiley

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Sun, Jie, Jin, Peng, Zhao, Chang, Yu, Like, Ye, Xiaoling, Xu, Bo, Chen, Yonghai, Wang, Zhanguo (2006) Electron Resonant Tunneling Through InAs∕GaAs Quantum Dots Embedded in a Schottky Diode with an AlAs Insertion Layer. Journal of the Electrochemical Society, 153. doi:10.1149/1.2202091
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Park, C. Y., Kim, J. M., Park, K. W., Lee, Y. T. (2009) Effect of GaAs interlayer thickness variations on the optical properties of multiple InAs QD structure. physica status solidi (c), 6 (4). 879-882 doi:10.1002/pssc.200880646
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Chen, Kunji, Huang, Jian, Ma, Zhongyuan, Wang, Xiang, Yao, Yao, Wang, Jiumin, Li, Wei, Xu, Jun, Huang, Xinfan (2009) Charge storage and light emission properties of three dimension controllable Si nanostructures. physica status solidi (c), 6 (3). 721-727 doi:10.1002/pssc.200880708
Neudert, K., Trojánek, F., Kuldová, K., Oswald, J., Hospodková, A., Malý, P. (2009) Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots. physica status solidi (c), 6 (4). 853-856 doi:10.1002/pssc.200880597
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Ogasawara, Kosuke, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori (2011) An ab initio-based approach to the adsorption behavior of In on InAs wetting layer grown on GaAs(001) substrate. physica status solidi (c), 8 (2). 245-247 doi:10.1002/pssc.201000501
 
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