Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S. R., Wang, J.-B., Zhang, Y.-H. (2009) Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole-confinement due to quantum islands. physica status solidi (c), 6 (2). 411-414 doi:10.1002/pssc.200880338

See Also

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	Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S. R., Wang, J.-B., Zhang, Y.-H. (2008) Hole confinement in quantum islands in Ga(AsSb)∕GaAs∕(AlGa)As heterostructures. Applied Physics Letters, 92 (16). 161101pp. doi:10.1063/1.2913767
	Bückers, C., Blume, G., Thränhardt, A., Schlichenmaier, C., Klar, P. J., Weiser, G., Koch, S. W., Hader, J., Moloney, J. V., Hosea, T. J. C., Sweeney, S. J., Wang, J.-B., Johnson, S. R., Zhang, Y.-H. (2007) Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures. Journal of Applied Physics, 101 (3). 33118pp. doi:10.1063/1.2433715
	Lange, C., Chatterjee, S., Kunert, B., Volz, K., Stolz, W., Rühle, W. W., Gerhardt, N. C., Hofmann, M. R. (2009) Gain characteristics and lasing of Ga(NAsP) multi-quantum well structures. physica status solidi (c), 6 (2). 576-578 doi:10.1002/pssc.200880360
	Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert, B., Volz, K., Stolz, W., Koch, S. W., Rühle, W. W. (2005) Time-resolved photoluminescence of type-I and type-II(GaIn)As∕Ga(NAs)heterostructures. Physical Review B, 71 (16) doi:10.1103/physrevb.71.165320
	Horst, S., Chatterjee, S., Rühle, W., Brick, P., Diehl, W., Stolz, W., Kühn, E., Thränhardt, A., Koch, S. W. (2009) Performance changes of a vertical-external-cavity surfaceemitting laser by an intra-cavity anti-reflex-coating. physica status solidi (c), 6 (2). 572-575 doi:10.1002/pssc.200880340
	Rubel, O., Baranovskii, S. D., Hantke, K., Rühle, W. W., Thomas, P., Volz, K., Stolz, W. (2006) Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells. physica status solidi (c), 3 (7). 2481-2484 doi:10.1002/pssc.200668066
	Hantke, K., Heber, J. D., Chatterjee, S., Klar, P. J., Volz, K., Stolz, W., Rühle, W. W., Polimeni, A., Capizzi, M. (2005) Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)∕GaAs quantum wells. Applied Physics Letters, 87 (25). 252111pp. doi:10.1063/1.2149154
	Karcher, C., Grüning, H., Güngerich, M., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W. (2009) Optical properties of Ga(NAsP) lattice matched to Si. physica status solidi (c), 6 (12). 2638-2643 doi:10.1002/pssc.200982544
	Diehl, W., Brick, P., Chatterjee, S., Horst, S., Hantke, K., Rühle, W. W., Stolz, W., Thränhardt, A., Koch, S. W. (2007) Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale. Applied Physics Letters, 90 (24). 241102pp. doi:10.1063/1.2748079
	Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W., Meier, T., Koch, S. W., Hader, J., Moloney, J. V. (2005) Type I-type II transition in InGaAs–GaNAs heterostructures. Applied Physics Letters, 86 (8). 81903pp. doi:10.1063/1.1870132
	Koukourakis, N., Bückers, C., Funke, D. A., Gerhardt, N. C., Liebich, S., Chatterjee, S., Lange, C., Zimprich, M., Volz, K., Stolz, W., Kunert, B., Koch, S. W., Hofmann, M. R. (2012) High room-temperature optical gain in Ga(NAsP)/Si heterostructures. Applied Physics Letters, 100 (9). 92107pp. doi:10.1063/1.3690886