Schaake, Christopher A., Fichtenbaum, Nicholas A., Neufeld, Carl J., Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K. (2008) M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth onc-plane patterned templates. physica status solidi (c), 5 (9). 2963-2965 doi:10.1002/pssc.200779284

See Also

These are possibly similar items as determined by title/reference text matching only.

	Neufeld, C. J., Schaake, C., Grundmann, M., Fichtenbaum, N. A., Keller, S., Mishra, U. K. (2007) InGaN/GaN nanopillar-array light emitting diodes. physica status solidi (c), 4 (5). 1605-1608 doi:10.1002/pssc.200674292
	Fujiwara, Tetsuya, Keller, Stacia, Speck, James S., DenBaars, Steven P., Mishra, Umesh K. (2012) Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer. physica status solidi (c), 9 (3). 891-893 doi:10.1002/pssc.201100419
	Fichtenbaum, Nicholas A., Neufeld, Carl J., Schaake, Chris, Wu, Yuan, Wong, Man Hoi, Grundmann, Michael, Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K. (2007) Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l230
	Chakraborty, Arpan, Haskell, Benjamin A., Keller, Stacia, Speck, James S., Denbaars, Steven P., Nakamura, Shuji, Mishra, Umesh K. (2005) Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l173
	Fichtenbaum, N. A., Neufeld, C. J., Schaake, C., Wu, Y., Wong, M. H., Grundmann, M., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K. (2007) MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures. physica status solidi (b), 244 (6). 1802-1805 doi:10.1002/pssb.200674753
	Keller, S., Fichtenbaum, N. A., Schaake, C., Neufeld, C. J., David, A., Matioli, E., Wu, Y., DenBaars, S. P., Speck, J. S., Weisbuch, C., Mishra, U. K. (2007) Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells. physica status solidi (b), 244 (6). 1797-1801 doi:10.1002/pssb.200674752
	Chakraborty, Arpan, Kim, Kwang Choong, Wu, Feng, Haskell, Benjamin A., Keller, Stacia, Speck, James S., Nakamura, Shuji, DenBaars, Steven P., Mishra, Umesh K. (2006) Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrowna-Plane GaN. Japanese Journal of Applied Physics, 45 (11) 8659-8661 doi:10.1143/jjap.45.8659
	Neufeld, Carl J., Cruz, Samantha C., Farrell, Robert M., Iza, Michael, Keller, Stacia, Nakamura, Shuji, DenBaars, Steven P., Speck, James S., Mishra, Umesh K. (2011) Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells. Applied Physics Letters, 99 (7). 71104pp. doi:10.1063/1.3624850
	Keller, Stacia, Dora, Yuvaraj, Chowdhury, Srabanti, Wu, Feng, Chen, Xu, DenBaars, Steven P., Speck, James S., Mishra, Umesh K. (2011) Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon. physica status solidi (c), 8 (7). 2086-2088 doi:10.1002/pssc.201000958
	Chakraborty, Arpan, Keller, Stacia, Meier, Cedrik, Haskell, Benjamin A., Keller, Salka, Waltereit, Patrick, DenBaars, Steven P., Nakamura, Shuji, Speck, James S., Mishra, Umesh K. (2005) Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86 (3). 31901pp. doi:10.1063/1.1851007
	Masui, Hisashi, Chakraborty, Arpan, Haskell, Benjamin A., Mishra, Umesh K., Speck, James S., Nakamura, Shuji, DenBaars, Steven P. (2005) Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulkm-Plane GaN Substrate. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l1329