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Fernández-Hevia, D., de Frutos, J., Caballero, A. C., Fernández, J. F. (2002) Mott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors. Journal of Applied Physics, 92 (5). 2890-2898 doi:10.1063/1.1498968

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Reference TypeJournal (article/letter/editorial)
TitleMott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors
JournalJournal of Applied Physics
AuthorsFernández-Hevia, D.Author
de Frutos, J.Author
Caballero, A. C.Author
Fernández, J. F.Author
Year2002 (September)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1498968Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116537Long-form Identifiermindat:1:5:5116537:6
GUID0
Full ReferenceFernández-Hevia, D., de Frutos, J., Caballero, A. C., Fernández, J. F. (2002) Mott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors. Journal of Applied Physics, 92 (5). 2890-2898 doi:10.1063/1.1498968
Plain TextFernández-Hevia, D., de Frutos, J., Caballero, A. C., Fernández, J. F. (2002) Mott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors. Journal of Applied Physics, 92 (5). 2890-2898 doi:10.1063/1.1498968
In(2002, September) Journal of Applied Physics Vol. 92 (5) AIP Publishing

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Fernández-Hevia, D., de Frutos, J., Caballero, A. C., Fernández, J. F. (2003) Dominance of deep over shallow donors in ZnO-based varistors. Applied Physics Letters, 83 (13). 2692-2694 doi:10.1063/1.1608466
Fernández-Hevia, D., de Frutos, J., Caballero, A. C., Fernández, J. F. (2003) Bulk-grain resistivity and positive temperature coefficient of ZnO-based varistors. Applied Physics Letters, 82 (2). 212-214 doi:10.1063/1.1534620
Schipani, F, Aldao, C M, Ponce, M A (2012) Inadequacy of the Mott–Schottky equation in strongly pinned double Schottky barriers with no deep donors. Journal of Physics D: Applied Physics, 45. 495302pp. doi:10.1088/0022-3727/45/49/495302
Fernández, J. F., Caballero, A. C., Villegas, M., de Frutos, J., Lascano, L. (2002) Relaxor behavior of PbxBi4Ti3+xO12+3x (x=2,3) Aurivillius ceramics. Applied Physics Letters, 81 (25). 4811-4813 doi:10.1063/1.1529088
Alim, Mohammad A. (1995) An analysis of the Mott‐Schottky behavior in ZnO‐Bi2O3based varistors. Journal of Applied Physics, 78 (7). 4776-4779 doi:10.1063/1.359824
Fernández, Anton F., Zojer, Karin (2017) Utilizing Schottky barriers to suppress short-channel effects in organic transistors. Applied Physics Letters, 111 (17). 173302pp. doi:10.1063/1.4997405
Wu, C. J., Wittry, D. B. (1978) Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers. Journal of Applied Physics, 49 (5). 2827-2836 doi:10.1063/1.325163
Peiteado, M., De La Rubia, M. A., Fernández, J. F., Caballero, A. C. (2006) Thermal evolution of ZnO-Bi2O3-Sb2O3 system in the region of interest for varistors. Journal of Materials Science, 41. 2319-2325 doi:10.1007/s10853-006-7168-5
López-Ponce, E., Costa-Krämer, J. L., Martín-González, M. S., Briones, F., Fernández, J. F., Caballero, A. C., Villegas, M., de Frutos, J. (2006) Growth and characterization of Sn doped ZnO thin films by pulsed laser deposition. physica status solidi (a), 203 (6). 1383-1389 doi:10.1002/pssa.200566177
Rubinelli, F. A., Hou, J. Y., Fonash, S. J. (1993) Bias‐voltage‐ and bias‐light‐dependent high photocurrent gains in amorphous silicon Schottky barriers. Journal of Applied Physics, 73 (5). 2548-2554 doi:10.1063/1.353089
Piscator, J., Engström, O. (2008) Schottky barriers on silicon nanowires influenced by charge configuration. Journal of Applied Physics, 104 (5). 54515pp. doi:10.1063/1.2976316
 
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