Darakchieva, V., Beckers, M., Hultman, L., Xie, M., Monemar, B., Carlin, J.-F., Grandjean, N. (2008) Strain and compositional analyses of Al-rich Al1–xInxN films grown by MOVPE: impact on the applicability of Vegard's rule. physica status solidi (c), 5 (6). 1859-1862 doi:10.1002/pssc.200778706

See Also

These are possibly similar items as determined by title/reference text matching only.

	Darakchieva, V., Beckers, M., Xie, M.-Y., Hultman, L., Monemar, B., Carlin, J.-F., Feltin, E., Gonschorek, M., Grandjean, N. (2008) Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire. Journal of Applied Physics, 103 (10). 103513pp. doi:10.1063/1.2924426
	Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., Grandjean, N., Darakchieva, V., Monemar, B., Lorenz, M., Ramm, G. (2008) Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23). Journal of Applied Physics, 103 (9). 93714pp. doi:10.1063/1.2917290
	Seppänen, T., Hultman, L., Birch, J., Beckers, M., Kreissig, U. (2007) Deviations from Vegard’s rule in Al1−xInxN (0001) alloy thin films grown by magnetron sputter epitaxy. Journal of Applied Physics, 101 (4). 43519pp. doi:10.1063/1.2450675
	Letrouit, A., Kret, S., Ivaldi, F., Carlin, J. F., Kaufman, N. A. K., Grandjean, N., Górecka, J. (2012) Low loss EEL spectroscopy performed on InxAl1-xN layers grown by MOVPE: comparison between experiment and ab-initio calculations. physica status solidi (c), 9 (3). 989-992 doi:10.1002/pssc.201100178
	Xie, M.-Y., Tasnádi, F., Abrikosov, I. A., Hultman, L., Darakchieva, V. (2012) Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule. Physical Review B, 86 (15) doi:10.1103/physrevb.86.155310
	Paskov, P. P., Bergman, J. P., Darakchieva, V., Paskova, T., Monemar, B., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2005) Photoluminescence of GaN/AlN superlattices grown by MOCVD. physica status solidi (c), 2 (7). 2345-2348 doi:10.1002/pssc.200461367
	Pozzovivo, G., Kuzmik, J., Golka, S., Čičo, K., Fröhlich, K., Carlin, J.-F., Gonschorek, M., Grandjean, N., Schrenk, W., Strasser, G., Pogany, D. (2008) Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD. physica status solidi (c), 5 (6). 1956-1958 doi:10.1002/pssc.200778528
	Stokker-Cheregi, F., Vinattieri, A., Feltin, E., Simeonov, D., Carlin, J.-F., Butté, R., Grandjean, N., Gurioli, M. (2008) Biexciton recombination in high quality GaN/AlGaN quantum wells. physica status solidi (c), 5 (6). 2254-2256 doi:10.1002/pssc.200778656
	Darakchieva, V., Xie, M.-Y., Tasnádi, F., Abrikosov, I. A., Hultman, L., Monemar, B., Kamimura, J., Kishino, K. (2008) Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN. Applied Physics Letters, 93 (26). 261908pp. doi:10.1063/1.3056656
	Paskova, T., Darakchieva, V., Paskov, P. P., Monemar, B., Bukowski, M., Suski, T., Ashkenov, N., Schubert, M., Hommel, D. (2006) Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing. physica status solidi (c), 3 (6). 1475-1478 doi:10.1002/pssc.200565412
	Ito, T., Yoshikawa, M., Watanabe, A., Egawa, T. (2008) Trap states in n-GaN grown on AlN/sapphire template by MOVPE. physica status solidi (c), 5 (9). 2998-3000 doi:10.1002/pssc.200779249