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Binetti, S., Pizzini, S., Leoni, E., Somaschini, R., Castaldini, A., Cavallini, A. (2002) Optical properties of oxygen precipitates and dislocations in silicon. Journal of Applied Physics, 92 (5). 2437-2445 doi:10.1063/1.1497450

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Reference TypeJournal (article/letter/editorial)
TitleOptical properties of oxygen precipitates and dislocations in silicon
JournalJournal of Applied Physics
AuthorsBinetti, S.Author
Pizzini, S.Author
Leoni, E.Author
Somaschini, R.Author
Castaldini, A.Author
Cavallini, A.Author
Year2002 (September)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1497450Search in ResearchGate
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Mindat Ref. ID5116439Long-form Identifiermindat:1:5:5116439:5
GUID0
Full ReferenceBinetti, S., Pizzini, S., Leoni, E., Somaschini, R., Castaldini, A., Cavallini, A. (2002) Optical properties of oxygen precipitates and dislocations in silicon. Journal of Applied Physics, 92 (5). 2437-2445 doi:10.1063/1.1497450
Plain TextBinetti, S., Pizzini, S., Leoni, E., Somaschini, R., Castaldini, A., Cavallini, A. (2002) Optical properties of oxygen precipitates and dislocations in silicon. Journal of Applied Physics, 92 (5). 2437-2445 doi:10.1063/1.1497450
In(2002, September) Journal of Applied Physics Vol. 92 (5) AIP Publishing

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Castaldini, A., Cavalcoli, D., Cavallini, A., Binetti, S., Pizzini, S. (2005) Electronic transitions at defect states in Cz p-type silicon. Applied Physics Letters, 86 (16). 162109pp. doi:10.1063/1.1881788
Pizzini, S., Binetti, S., Le Donne, A., Marzegalli, A., Rabier, J. (2006) Optical properties of shuffle dislocations in silicon. Applied Physics Letters, 88 (21). 211910pp. doi:10.1063/1.2206874
Binetti, S, Somaschini, R, Donne, A Le, Leoni, E, Pizzini, S, Li, D, Yang, D (2002) Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon. Journal of Physics: Condensed Matter, 14 (48). 13247-13254 doi:10.1088/0953-8984/14/48/375
Castaldini, A., Cavalcoli, D., Cavallini, A., Pizzini, S. (2005) Defect states in Czochalski p-type silicon: the role of oxygen and dislocations. physica status solidi (a), 202 (5). 889-895 doi:10.1002/pssa.200460510
Acciarri, M, Cirelli, C, Pizzini, S, Binetti, S, Castaldini, A, Cavallini, A (2002) Study of the correlation between radiative and non-radiative recombination channels in silicon. Journal of Physics: Condensed Matter, 14 (48). 13223-13230 doi:10.1088/0953-8984/14/48/372
Leoni, E., Martinelli, L., Binetti, S., Borionetti, G., Pizzini, S. (2004) The Origin of Photoluminescence from Oxygen Precipitates Nucleated at Low Temperature in Semiconductor Silicon. Journal of the Electrochemical Society, 151. doi:10.1149/1.1817772
Castaldini, A., Cavallini, A., Rigutti, L., Pizzini, S., Le Donne, A., Binetti, S. (2006) Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC. Journal of Applied Physics, 99 (3). 33701pp. doi:10.1063/1.2160708
Cavallini, A., Fraboni, B., Pizzini, S., Binetti, S., Sanguinetti, S., Lazzarini, L., Salviati, G. (1999) Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy. Journal of Applied Physics, 85 (3). 1582-1586 doi:10.1063/1.369289
Acerboni, S., Pizzini, S., Binetti, S., Acciarri, M., Pichaud, B. (1994) Effect of oxygen aggregation processes on the recombining activity of 60° dislocations in Czochralski grown silicon. Journal of Applied Physics, 76 (5). 2703-2710 doi:10.1063/1.357573
Castaldini, A., Cavallini, A., Fraboni, B., Pizzini, S. (2000) Charge collection mapping of the back-transfer process in Er-doped silicon. Applied Physics Letters, 76 (24). 3585-3587 doi:10.1063/1.126714
Leoni, E., Binetti, S., Pichaud, B., Pizzini, S. (2004) Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration. The European Physical Journal Applied Physics, 27 (1). 123-127 doi:10.1051/epjap:2004146
 
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