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Lin, E. Y., Chen, C. Y., Lay, T. S., Wang, T. C., Tsay, J. D., Peng, P. X., Lin, T. Y. (2008) Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells ona -plane GaN. physica status solidi (c), 5 (6). 2111-2113 doi:10.1002/pssc.200778461

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Reference TypeJournal (article/letter/editorial)
TitleInternal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells ona -plane GaN
Journalphysica status solidi (c)
AuthorsLin, E. Y.Author
Chen, C. Y.Author
Lay, T. S.Author
Wang, T. C.Author
Tsay, J. D.Author
Peng, P. X.Author
Lin, T. Y.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778461Search in ResearchGate
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Mindat Ref. ID5116098Long-form Identifiermindat:1:5:5116098:2
GUID0
Full ReferenceLin, E. Y., Chen, C. Y., Lay, T. S., Wang, T. C., Tsay, J. D., Peng, P. X., Lin, T. Y. (2008) Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells ona -plane GaN. physica status solidi (c), 5 (6). 2111-2113 doi:10.1002/pssc.200778461
Plain TextLin, E. Y., Chen, C. Y., Lay, T. S., Wang, T. C., Tsay, J. D., Peng, P. X., Lin, T. Y. (2008) Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells ona -plane GaN. physica status solidi (c), 5 (6). 2111-2113 doi:10.1002/pssc.200778461
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Lin, E.Y., Chen, C.Y., Lay, T.S., Peng, Z.X., Lin, T.Y., Wang, T.C., Tsay, J.D. (2010) Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN. Physica B: Condensed Matter, 405 (7). 1857-1860 doi:10.1016/j.physb.2010.01.063
Chen, Z. Z., Qi, S. L., Liu, P., Yu, T. J., Wang, C. D., He, Z. K., Tong, Y. Z., Pan, Y. B., Hao, M. S., Zhang, G. Y. (2009) Characterization of asymmetric GaN/InGaN multiple quantum well. physica status solidi (c), 6. doi:10.1002/pssc.200880821
Wang, Te-Chung, Ko, Tsung-Shine, Lu, Tien-Chang, Kuo, Hao-Chung, Gao, Run-Ci, Tsay, Jenq-Dar, Wang, Sing-Chung (2008) Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions. physica status solidi (c), 5 (6). 2161-2163 doi:10.1002/pssc.200778503
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