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Ishikawa, H., Jimbo, T., Egawa, T. (2008) GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si. physica status solidi (c), 5 (6). 2086-2088 doi:10.1002/pssc.200778441

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Reference TypeJournal (article/letter/editorial)
TitleGaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
Journalphysica status solidi (c)
AuthorsIshikawa, H.Author
Jimbo, T.Author
Egawa, T.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778441Search in ResearchGate
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Mindat Ref. ID5116063Long-form Identifiermindat:1:5:5116063:6
GUID0
Full ReferenceIshikawa, H., Jimbo, T., Egawa, T. (2008) GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si. physica status solidi (c), 5 (6). 2086-2088 doi:10.1002/pssc.200778441
Plain TextIshikawa, H., Jimbo, T., Egawa, T. (2008) GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si. physica status solidi (c), 5 (6). 2086-2088 doi:10.1002/pssc.200778441
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Ishikawa, H., Asano, K., Zhang, B., Egawa, T., Jimbo, T. (2004) Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si. phys. stat. sol. (a), 201 (12) 2653-2657 doi:10.1002/pssa.200405002
Ishikawa, Hiroyasu, Zhang, Baijun, Asano, Kenta, Egawa, Takashi, Jimbo, Takashi (2004) Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si. Journal of Crystal Growth, 272 (1). 322-326 doi:10.1016/j.jcrysgro.2004.08.054
Li, Y., Senawiratne, J., Xia, Y., Zhao, W., Zhu, M., Detchprohm, T., Wetzel, C. (2008) Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes. physica status solidi (c), 5 (6). 2293-2295 doi:10.1002/pssc.200778713
Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M., Jimbo, T. (2000) Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire. Applied Physics Letters, 76 (14). 1804-1806 doi:10.1063/1.126171
Zhang, B.J., Egawa, T., Ishikawa, H., Nishikawa, N., Jimbo, T., Umeno, M. (2001) InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates. physica status solidi (a), 188 (1). 151-154 doi:10.1002/1521-396x(200111)188:1<151::aid-pssa151>3.0.co;2-4
Hao, M., Ishikawa, H., Zhang, B., Egawa, T. (2004) GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formedin situ metalorganic vapor phase epitaxial reactor. physica status solidi (c), 1 (10). 2397-2400 doi:10.1002/pssc.200404982
Zhao, W., Li, Y., Detchprohm, T., Wetzel, C. (2007) The quantum efficiency of green GaInN/GaN light emitting diodes. physica status solidi (c), 4 (1). 9-12 doi:10.1002/pssc.200673580
Wunderer, T., Lipski, F., Hertkorn, J., Brückner, P., Scholz, F., Feneberg, M., Schirra, M., Thonke, K., Chuvilin, A., Kaiser, U. (2008) Bluish-green semipolar GaInN/GaN light emitting diodes on {101} GaN side facets. physica status solidi (c), 5 (6). 2059-2062 doi:10.1002/pssc.200778406
Hikosaka, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates. physica status solidi (c), 5 (6). 2234-2237 doi:10.1002/pssc.200778642
Nishida, T. (2004) GaN-free transparent structure for ultraviolet light emitting diodes. physica status solidi (c), 1 (6). 1496-1504 doi:10.1002/pssc.200304091
Wetzel, C., Li, P., Detchprohm, T., Nelson, J. S. (2005) Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity. physica status solidi (c), 2 (7). 2871-2873 doi:10.1002/pssc.200461391
 
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