登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Kumagai, Y., Nagashima, T., Murakami, H., Takada, K., Koukitu, A. (2008) Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy. physica status solidi (c), 5 (6). 1512-1514 doi:10.1002/pssc.200778432

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleCharacterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy
Journalphysica status solidi (c)
AuthorsKumagai, Y.Author
Nagashima, T.Author
Murakami, H.Author
Takada, K.Author
Koukitu, A.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778432Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116051Long-form Identifiermindat:1:5:5116051:1
GUID0
Full ReferenceKumagai, Y., Nagashima, T., Murakami, H., Takada, K., Koukitu, A. (2008) Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy. physica status solidi (c), 5 (6). 1512-1514 doi:10.1002/pssc.200778432
Plain TextKumagai, Y., Nagashima, T., Murakami, H., Takada, K., Koukitu, A. (2008) Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy. physica status solidi (c), 5 (6). 1512-1514 doi:10.1002/pssc.200778432
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

See Also

These are possibly similar items as determined by title/reference text matching only.

Yamane, T., Murakami, H., Kangawa, Y., Kumagai, Y., Koukitu, A. (2005) Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy. physica status solidi (c), 2 (7). 2062-2065 doi:10.1002/pssc.200461551
Nagashima, Toru, Hironaka, Keiichiro, Ishizuki, Masanari, Kumagai, Yoshinao, Koukitu, Akinori, Takada, Kazuya (2009) Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880823
Tajima, J., Kubota, Y., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C. physica status solidi (c), 5 (6). 1515-1517 doi:10.1002/pssc.200778433
Saito, K., Tajima, J., Kumagai, Y., Ishizuki, M., Takada, K., Morioka, H., Koukitu, A. (2009) Measurement of misorientation of AlN layer grown on (111)Si for freestanding substrate. physica status solidi (c), 6. doi:10.1002/pssc.200880787
Tajima, J., Kubota, Y., Ishizuki, M., Nagashima, T., Togashi, R., Murakami, H., Kumagai, Y., Takada, K., Koukitu, A. (2009) Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer. physica status solidi (c), 6. doi:10.1002/pssc.200880854
Kikuchi, J., Nishizawa, Y., Murakami, H., Kumagai, Y., Koukitu, A. (2007) A new system for growing thick InN layers by hydride vapor phase epitaxy. physica status solidi (c), 4 (7). 2419-2422 doi:10.1002/pssc.200674764
Tajima, Jumpei, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Takada, Kazuya, Koukitu, Akinori (2011) Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy. physica status solidi (c), 8 (7). 2028-2030 doi:10.1002/pssc.201000954
Kumagai, Y., Takemoto, K., Kikuchi, J., Hasegawa, T., Murakami, H., Koukitu, A. (2006) Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3. physica status solidi (b), 243 (7). 1431-1435 doi:10.1002/pssb.200565208
Murakami, H., Kikuchi, J., Kumagai, Y., Koukitu, A. (2006) Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Alx Ga1–xN. physica status solidi (c), 3 (6). 1457-1460 doi:10.1002/pssc.200565209
Yamane, T., Hanaoka, K., Murakami, H., Kumagai, Y., Koukitu, A. (2011) Tri-halide vapor phase epitaxy of GaN using GaCl3 gas as a group III precursor. physica status solidi (c), 8 (5). 1471-1474 doi:10.1002/pssc.201000902
Kumagai, Yoshinao, Nagashima, Toru, Koukitu, Akinori (2007) Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l389
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 09:25:05
Go to top of page