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Trevisanello, Lorenzo, Meneghini, Matteo, Zehnder, Ulrich, Hahn, Berthold, Meneghesso, Gaudenzio, Zanoni, Enrico (2008) High temperature instabilities of ohmic contacts on p-GaN. physica status solidi (c), 5 (2). 435-440 doi:10.1002/pssc.200777475

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Reference TypeJournal (article/letter/editorial)
TitleHigh temperature instabilities of ohmic contacts on p-GaN
Journalphysica status solidi (c)
AuthorsTrevisanello, LorenzoAuthor
Meneghini, MatteoAuthor
Zehnder, UlrichAuthor
Hahn, BertholdAuthor
Meneghesso, GaudenzioAuthor
Zanoni, EnricoAuthor
Year2008 (February)Volume5
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200777475Search in ResearchGate
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Mindat Ref. ID5115597Long-form Identifiermindat:1:5:5115597:1
GUID0
Full ReferenceTrevisanello, Lorenzo, Meneghini, Matteo, Zehnder, Ulrich, Hahn, Berthold, Meneghesso, Gaudenzio, Zanoni, Enrico (2008) High temperature instabilities of ohmic contacts on p-GaN. physica status solidi (c), 5 (2). 435-440 doi:10.1002/pssc.200777475
Plain TextTrevisanello, Lorenzo, Meneghini, Matteo, Zehnder, Ulrich, Hahn, Berthold, Meneghesso, Gaudenzio, Zanoni, Enrico (2008) High temperature instabilities of ohmic contacts on p-GaN. physica status solidi (c), 5 (2). 435-440 doi:10.1002/pssc.200777475
In(2008, February) physica status solidi (c) Vol. 5 (2) Wiley

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Meneghini, M., Trevisanello, L., Zehnder, U., Meneghesso, G., Zanoni, E. (2008) Thermal degradation of InGaN/GaN LEDs ohmic contacts. physica status solidi (c), 5 (6). 2250-2253 doi:10.1002/pssc.200778654
Meneghini, Matteo, Trivellin, Nicola, Butendeich, Rainer, Zehnder, Ulrich, Hahn, Berthold, Meneghesso, Gaudenzio, Zanoni, Enrico (2010) Reliability of InGaN-based LEDs submitted to reverse-bias stress. physica status solidi (c), 7 (7). 2208-2210 doi:10.1002/pssc.200983535
Meneghini, Matteo, Trivellin, Nicola, Meneghesso, Gaudenzio, Trevisanello, Lorenzo, Zanoni, Enrico, Orita, Kenji, Yuri, Masaaki, Ueda, Daisuke (2009) Analysis of the role of current in the degradation of InGaN-based laser diodes. physica status solidi (c), 6. doi:10.1002/pssc.200880843
Trivellin, Nicola, Meneghini, Matteo, Zanotto, Alberto, Meneghesso, Gaudenzio, Zanoni, Enrico (2011) Ageing mechanisms of 420 nm GaN HBLED. physica status solidi (c), 8 (7). 2360-2362 doi:10.1002/pssc.201001025
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Castaldini, A., Cavallini, A., Rigutti, L., Meneghini, M., Levada, S., Meneghesso, G., Zanoni, E., Härle, V., Zahner, T., Zehnder, U. (2005) Short term instabilities of InGaN GaN light emitting diodes by capacitance-voltage characteristics and junction spectroscopy. physica status solidi (c), 2 (7). 2862-2865 doi:10.1002/pssc.200461619
Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico (2014) Breakdown mechanisms in AlGaN/GaN HEMTs: An overview. Japanese Journal of Applied Physics, 53 (10) 100211 doi:10.7567/jjap.53.100211
Meneghini, Matteo, Stocco, Antonio, Silvestri, Riccardo, Meneghesso, Gaudenzio, Zanoni, Enrico (2012) Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons. Applied Physics Letters, 100 (23). 233508pp. doi:10.1063/1.4723848
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