Le Bourhis, E., Patriarche, G. (2007) Nanoindentation response of compound semiconductors. physica status solidi (c), 4 (8). 3002-3009 doi:10.1002/pssc.200675450

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Reference Type	Journal (article/letter/editorial)
Title	Nanoindentation response of compound semiconductors
Journal	physica status solidi (c)
Authors	Le Bourhis, E.		Author
Authors	Patriarche, G.		Author
Year	2007 (July)	Volume	4
Issue	8
Publisher	Wiley
DOI	doi:10.1002/pssc.200675450Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5114830	Long-form Identifier	mindat:1:5:5114830:6
GUID	0
Full Reference	Le Bourhis, E., Patriarche, G. (2007) Nanoindentation response of compound semiconductors. physica status solidi (c), 4 (8). 3002-3009 doi:10.1002/pssc.200675450
Plain Text	Le Bourhis, E., Patriarche, G. (2007) Nanoindentation response of compound semiconductors. physica status solidi (c), 4 (8). 3002-3009 doi:10.1002/pssc.200675450
In	(2007, July) physica status solidi (c) Vol. 4 (8) Wiley

	*Bourhis, Eric Le, Patriarche, Gilles (2009) Doping influence on the nanoindentation response of GaAs. physica status solidi (c), 6 (8). 1841-1846 doi:10.1002/pssc.200881445*
	*Patriarche, G., Le Bourhis, E., Largeau, L., Rivière, J.-P. (2005) Polarity influence on the nanoindentation response of GaAs. physica status solidi (c), 2 (6). 2004-2009 doi:10.1002/pssc.200460548*
	*Rabier, Jacques, Le Bourhis, Eric, Conference Chairmen, (2009) Preface: Phys. Status Solidi C 6/8. physica status solidi (c), 6 (8). 1797-1799 doi:10.1002/pssc.200960067*
	*Le Bourhis, E., Patriarche, G. (2000) Room-Temperature Plasticity of InAs. physica status solidi (a), 179 (1). 153-158 doi:10.1002/1521-396x(200005)179:1<153::aid-pssa153>3.0.co;2-z*
	*Le Bourhis, E., Patriarche, G. (2005) Nanoindentation response of a single micrometer-sized GaAs wall. Applied Physics Letters, 86 (16). 163107pp. doi:10.1063/1.1904711*
	Le Bourhis, E., Patriarche, G. (2002) Strength Enhancement of Compensated Strained InP/AlP Superlattice. physica status solidi (a), 189 (1). 175-181 doi:10.1002/1521-396x(200201)189:1<175::aid-pssa175>3.0.co;2-i
	*Le Bourhis, E, Patriarche, G (2008) Nanoindentation response of a thin InP membrane. Journal of Physics D: Applied Physics, 41. 74003pp. doi:10.1088/0022-3727/41/7/074003*
	*Patriarche, G., Bourhis, E. Le (2000) Nanoindentation of GaAs compliant substrates. Philosophical Magazine A, 80 (12). 2899-2911 doi:10.1080/01418610008223901*
	*Bourhis, G. Patriarche, E. Le (2000) Nanoindentation of GaAs compliant substrates. Philosophical Magazine A, 80 (12). 2899-2911 doi:10.1080/014186100300012616*
	*Savini, G. (2007) Theory of partial dislocations in SiC. physica status solidi (c), 4 (8). 2883-2887 doi:10.1002/pssc.200675433*
	Le Bourhis, E., Patriarche, G., Largeau, L., Rivière, J.P. (2004) Polarity-induced changes in the nanoindentation response of GaAs. Journal of Materials Research, 19 (1) 131-136 doi:10.1557/jmr.2004.19.1.131

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Le Bourhis, E., Patriarche, G. (2007) Nanoindentation response of compound semiconductors. physica status solidi (c), 4 (8). 3002-3009 doi:10.1002/pssc.200675450

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