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Ueda, M., Hayashi, K., Kondou, T., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2007) Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures. physica status solidi (c), 4 (7). 2826-2829 doi:10.1002/pssc.200674875

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Reference TypeJournal (article/letter/editorial)
TitleMechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures
Journalphysica status solidi (c)
AuthorsUeda, M.Author
Hayashi, K.Author
Kondou, T.Author
Funato, M.Author
Kawakami, Y.Author
Narukawa, Y.Author
Mukai, T.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674875Search in ResearchGate
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Mindat Ref. ID5114727Long-form Identifiermindat:1:5:5114727:3
GUID0
Full ReferenceUeda, M., Hayashi, K., Kondou, T., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2007) Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures. physica status solidi (c), 4 (7). 2826-2829 doi:10.1002/pssc.200674875
Plain TextUeda, M., Hayashi, K., Kondou, T., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2007) Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures. physica status solidi (c), 4 (7). 2826-2829 doi:10.1002/pssc.200674875
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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Ueda, M., Kondou, T., Hayashi, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2007) Additive color mixture of emission from InGaN∕GaN quantum wells on structure-controlled GaN microfacets. Applied Physics Letters, 90 (17). 171907pp. doi:10.1063/1.2731526
Funato, M., Hayashi, K., Ueda, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2008) Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells. Applied Physics Letters, 93 (2). 21126pp. doi:10.1063/1.2956404
Funato, M., Kotani, T., Kondou, T., Kawakami, Y., Narukawa, Y., Mukai, T. (2006) Tailored emission color synthesis using microfacet quantum wells consisting of nitride semiconductors without phosphors. Applied Physics Letters, 88 (26). 261920pp. doi:10.1063/1.2217259
Ueda, M., Kojima, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2006) Epitaxial growth and optical properties of semipolar (112¯2) GaN and InGaN∕GaN quantum wells on GaN bulk substrates. Applied Physics Letters, 89 (21). 211907pp. doi:10.1063/1.2397029
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Yamada, T., Tsuchiya, T., Imada, K., Iwami, M., Kikawa, J., Araki, T., Suzuki, A., Nanishi, Y. (2007) Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy. physica status solidi (c), 4 (7). 2690-2694 doi:10.1002/pssc.200674763
Kusakabe, K., Furuzuki, T., Ohkawa, K. (2007) Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown onr-plane sapphire substrates by metalorganic vapor-phase epitaxy. physica status solidi (c), 4 (7). 2544-2547 doi:10.1002/pssc.200674830
Funato, M., Inoue, D., Ueda, M., Kawakami, Y., Narukawa, Y., Mukai, T. (2010) Strain states in semipolar III-nitride semiconductor quantum wells. Journal of Applied Physics, 107 (12). 123501pp. doi:10.1063/1.3446297
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Staszczak, G., Suski, T., Khachapuridze, A., Perlin, P., Funato, M., Kawakami, Y. (2011) Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence. physica status solidi (a), 208 (7). 1526-1528 doi:10.1002/pssa.201000975
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2009) Surface diffusion during metalorganic vapor phase epitaxy of AlN. physica status solidi (c), 6 (2). 599-602 doi:10.1002/pssc.200880415
 
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