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Wintrebert-Fouquet, M., Butcher, K. S. A., Chen, P. P.-T., Wuhrer, R. (2007) Nitride film growth morphology using remote plasma enhanced chemical vapor deposition. physica status solidi (c), 4 (7). 2285-2288 doi:10.1002/pssc.200674728

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Reference TypeJournal (article/letter/editorial)
TitleNitride film growth morphology using remote plasma enhanced chemical vapor deposition
Journalphysica status solidi (c)
AuthorsWintrebert-Fouquet, M.Author
Butcher, K. S. A.Author
Chen, P. P.-T.Author
Wuhrer, R.Author
Year2007 (June)Volume4
Issue7
PublisherWiley
DOIdoi:10.1002/pssc.200674728Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5114523Long-form Identifiermindat:1:5:5114523:9
GUID0
Full ReferenceWintrebert-Fouquet, M., Butcher, K. S. A., Chen, P. P.-T., Wuhrer, R. (2007) Nitride film growth morphology using remote plasma enhanced chemical vapor deposition. physica status solidi (c), 4 (7). 2285-2288 doi:10.1002/pssc.200674728
Plain TextWintrebert-Fouquet, M., Butcher, K. S. A., Chen, P. P.-T., Wuhrer, R. (2007) Nitride film growth morphology using remote plasma enhanced chemical vapor deposition. physica status solidi (c), 4 (7). 2285-2288 doi:10.1002/pssc.200674728
In(2007, June) physica status solidi (c) Vol. 4 (7) Wiley

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