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Florescu, D. I., Pollak, Fred H., Lanford, William B., Khan, Farid, Adesida, I., Molnar, R. J. (2002) Ion-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001). Journal of Applied Physics, 91 (3). 1277-1280 doi:10.1063/1.1428798

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Reference TypeJournal (article/letter/editorial)
TitleIon-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001)
JournalJournal of Applied Physics
AuthorsFlorescu, D. I.Author
Pollak, Fred H.Author
Lanford, William B.Author
Khan, FaridAuthor
Adesida, I.Author
Molnar, R. J.Author
Year2002 (February)Volume91
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1428798Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113468Long-form Identifiermindat:1:5:5113468:6
GUID0
Full ReferenceFlorescu, D. I., Pollak, Fred H., Lanford, William B., Khan, Farid, Adesida, I., Molnar, R. J. (2002) Ion-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001). Journal of Applied Physics, 91 (3). 1277-1280 doi:10.1063/1.1428798
Plain TextFlorescu, D. I., Pollak, Fred H., Lanford, William B., Khan, Farid, Adesida, I., Molnar, R. J. (2002) Ion-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001). Journal of Applied Physics, 91 (3). 1277-1280 doi:10.1063/1.1428798
In(2002, February) Journal of Applied Physics Vol. 91 (3) AIP Publishing

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Florescu, D. I., Asnin, V. M., Pollak, Fred H., Molnar, R. J., Wood, C. E. C. (2000) High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence. Journal of Applied Physics, 88 (6). 3295-3300 doi:10.1063/1.1289072
Zou, J., Kotchetkov, D., Balandin, A. A., Florescu, D. I., Pollak, Fred H. (2002) Thermal conductivity of GaN films: Effects of impurities and dislocations. Journal of Applied Physics, 92 (5). 2534-2539 doi:10.1063/1.1497704
Florescu, D. I., Asnin, V. M., Pollak, Fred H., Jones, A. M., Ramer, J. C., Schurman, M. J., Ferguson, I. (2000) Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy. Applied Physics Letters, 77 (10). 1464-1466 doi:10.1063/1.1308057
Florescu, D. I., Mourokh, L. G., Pollak, Fred H., Look, D. C., Cantwell, G., Li, X. (2002) High spatial resolution thermal conductivity of bulk ZnO (0001). Journal of Applied Physics, 91 (2). 890-892 doi:10.1063/1.1426234
Kotchetkov, D., Zou, J., Balandin, A. A., Florescu, D. I., Pollak, Fred H. (2001) Effect of dislocations on thermal conductivity of GaN layers. Applied Physics Letters, 79 (26). 4316-4318 doi:10.1063/1.1427153
Asnin, V. M., Pollak, Fred H., Ramer, J., Schurman, M., Ferguson, I. (1999) High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope. Applied Physics Letters, 75 (9). 1240-1242 doi:10.1063/1.124654
Chaldyshev, V. V., Pollak, Fred H., Pophristic, M., Guo, S. P., Ferguson, I. (2002) Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films. Journal of Applied Physics, 92 (11). 6601-6606 doi:10.1063/1.1519342
Florescu, Doru Ion, Lee, Dong Seung, Ting, Steve Ming, Ramer, Jeff Craig, Pollak, Fred Hugo (2003) Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 42. 4444-4447 doi:10.1143/jjap.42.4444
Zhou, L., Lanford, W., Ping, A. T., Adesida, I., Yang, J. W., Khan, A. (2000) Low resistance Ti/Pt/Au ohmic contacts to p-type GaN. Applied Physics Letters, 76 (23). 3451-3453 doi:10.1063/1.126674
Ping, A. T., Adesida, I., Asif Khan, M. (1995) Study of chemically assisted ion beam etching of GaN using HCl gas. Applied Physics Letters, 67 (9). 1250-1252 doi:10.1063/1.114387
Sun, X. L., Goss, S. H., Brillson, L. J., Look, D. C., Molnar, R. J. (2002) Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy. Journal of Applied Physics, 91 (10). 6729pp. doi:10.1063/1.1454187
 
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