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(1999) physica status solidi (a), 176 (1). Wiley. doi:10.1002/(sici)1521-396x(199911)176:1<>1.0.co;2-m

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Reference TypeJournal (article/letter/editorial)
Journalphysica status solidi (a)
Year1999 (November)Volume176
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199911)176:1<>1.0.co;2-mSearch in ResearchGate
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Mindat Ref. ID5085010Long-form Identifiermindat:1:5:5085010:3
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Full Reference(1999) physica status solidi (a), 176 (1). Wiley. doi:10.1002/(sici)1521-396x(199911)176:1<>1.0.co;2-m
Plain Text(1999) physica status solidi (a), 176 (1). Wiley. doi:10.1002/(sici)1521-396x(199911)176:11.0.co;2-m
In(1999, November) physica status solidi (a) Vol. 176 (1) Wiley

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(1999) physica status solidi (a), 176 (2). Wiley. doi:10.1002/(sici)1521-396x(199912)176:2<>1.0.co;2-k
Nakamura, S. (1999) Present Status of InGaN-Based Laser Diodes. physica status solidi (a), 176 (1). 15-22 doi:10.1002/(sici)1521-396x(199911)176:1<15::aid-pssa15>3.0.co;2-6
(1999) physica status solidi (a), 171 (1). Wiley. doi:10.1002/(sici)1521-396x(199901)171:1<>1.0.co;2-u
(1999) physica status solidi (a), 172 (1). Wiley. doi:10.1002/(sici)1521-396x(199903)172:1<>1.0.co;2-r
(1999) physica status solidi (a), 173 (1). Wiley. doi:10.1002/(sici)1521-396x(199905)173:1<>1.0.co;2-o
(1999) physica status solidi (a), 174 (1). Wiley. doi:10.1002/(sici)1521-396x(199907)174:1<>1.0.co;2-l
(1999) physica status solidi (a), 175 (1). Wiley. doi:10.1002/(sici)1521-396x(199909)175:1<>1.0.co;2-i
Duboz, J.-Y. (1999) GaN as Seen by the Industry. physica status solidi (a), 176 (1). 5-14 doi:10.1002/(sici)1521-396x(199911)176:1<5::aid-pssa5>3.0.co;2-d
Ridley, B. K. (1999) The Low-Field Electron Mobility in Bulk AlGaN. physica status solidi (a), 176 (1). 359-362 doi:10.1002/(sici)1521-396x(199911)176:1<359::aid-pssa359>3.0.co;2-2
Kryliouk, O., Reek, M., Mastro, M., Anderson, T., Chai, B. (1999) GaN Substrates: Growth and Characterization. physica status solidi (a), 176 (1). 407-410 doi:10.1002/(sici)1521-396x(199911)176:1<407::aid-pssa407>3.0.co;2-q
Eastman, L. F. (1999) Results, Potential and Challenges of High Power GaN-Based Transistors. physica status solidi (a), 176 (1). 175-178 doi:10.1002/(sici)1521-396x(199911)176:1<175::aid-pssa175>3.0.co;2-i
 
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