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Zaumseil, P. (1998) High Resolution Determination of the Ge Depth Profile in SiGe Heterobipolar Transistor Structures by X-Ray Diffractometry. physica status solidi (a), 165 (1). 195-204 doi:10.1002/(sici)1521-396x(199801)165:1<195::aid-pssa195>3.0.co;2-i

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Reference TypeJournal (article/letter/editorial)
TitleHigh Resolution Determination of the Ge Depth Profile in SiGe Heterobipolar Transistor Structures by X-Ray Diffractometry
Journalphysica status solidi (a)
AuthorsZaumseil, P.Author
Year1998 (January)Volume165
Issue1
PublisherWiley
DOIdoi:10.1002/(sici)1521-396x(199801)165:1<195::aid-pssa195>3.0.co;2-iSearch in ResearchGate
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Mindat Ref. ID5083223Long-form Identifiermindat:1:5:5083223:1
GUID0
Full ReferenceZaumseil, P. (1998) High Resolution Determination of the Ge Depth Profile in SiGe Heterobipolar Transistor Structures by X-Ray Diffractometry. physica status solidi (a), 165 (1). 195-204 doi:10.1002/(sici)1521-396x(199801)165:1<195::aid-pssa195>3.0.co;2-i
Plain TextZaumseil, P. (1998) High Resolution Determination of the Ge Depth Profile in SiGe Heterobipolar Transistor Structures by X-Ray Diffractometry. physica status solidi (a), 165 (1). 195-204 doi:10.1002/(sici)1521-396x(199801)165:13.0.co;2-i
In(1998, January) physica status solidi (a) Vol. 165 (1) Wiley

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(1998) physica status solidi (a), 165 (1). Wiley. doi:10.1002/(sici)1521-396x(199801)165:1<>1.0.co;2-u
Lazarouk, S., Jaguiro, P., Borisenko, V. (1998) Integrated Optoelectronic Unit Based on Porous Silicon. physica status solidi (a), 165 (1). 87-90 doi:10.1002/(sici)1521-396x(199801)165:1<87::aid-pssa87>3.0.co;2-p
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Pavesi, L. (1998) Porous Silicon Based Light Emitting Diodes: A Progress Report. physica status solidi (a), 165 (1). 91-96 doi:10.1002/(sici)1521-396x(199801)165:1<91::aid-pssa91>3.0.co;2-m
Ilkovič, V., Tóth, Ľ. (1998) Effect of Interlayer Coupling in Ferromagnetic Ising Thin Films. physica status solidi (a), 165 (1). 255-260 doi:10.1002/(sici)1521-396x(199801)165:1<255::aid-pssa255>3.0.co;2-u
Aroutiounian, V. M., Ghoolinian, M.Zh., Matevosyan, K. B. (1998) Electro- and Photoluminescence in Graded-Gap Structures with Double Injection. physica status solidi (a), 165 (1). 135-139 doi:10.1002/(sici)1521-396x(199801)165:1<135::aid-pssa135>3.0.co;2-5
Westwater, J., Gosain, D. P., Usui, S. (1998) Si Nanowires Grown via the Vapour–Liquid–Solid Reaction. physica status solidi (a), 165 (1). 37-42 doi:10.1002/(sici)1521-396x(199801)165:1<37::aid-pssa37>3.0.co;2-z
Biedrzycki, K., Markowski, L., Czapla, Z. (1998) Pulsed TGS-Based Electron and Ion Emitter. physica status solidi (a), 165 (1). 283-293 doi:10.1002/(sici)1521-396x(199801)165:1<283::aid-pssa283>3.0.co;2-q
Yeh, E.C.-C., Chan, J. H., Hsu, K.Y.-J. (1998) Study on the Electrical Conduction of p+ Porous Silicon. physica status solidi (a), 165 (1). 63-67 doi:10.1002/(sici)1521-396x(199801)165:1<63::aid-pssa63>3.0.co;2-g
 
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