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Schumann, B., Flagmeyer, R., Weinert, H. (1988) Multi-quantum-well structures prepared by the flash evaporation technique. Growth, structural, and optical characterization. physica status solidi (a), 108 (1). 257-264 doi:10.1002/pssa.2211080126

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Reference TypeJournal (article/letter/editorial)
TitleMulti-quantum-well structures prepared by the flash evaporation technique. Growth, structural, and optical characterization
Journalphysica status solidi (a)
AuthorsSchumann, B.Author
Flagmeyer, R.Author
Weinert, H.Author
Year1988 (July 16)Volume108
Issue1
PublisherWiley
DOIdoi:10.1002/pssa.2211080126Search in ResearchGate
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Mindat Ref. ID5072136Long-form Identifiermindat:1:5:5072136:0
GUID0
Full ReferenceSchumann, B., Flagmeyer, R., Weinert, H. (1988) Multi-quantum-well structures prepared by the flash evaporation technique. Growth, structural, and optical characterization. physica status solidi (a), 108 (1). 257-264 doi:10.1002/pssa.2211080126
Plain TextSchumann, B., Flagmeyer, R., Weinert, H. (1988) Multi-quantum-well structures prepared by the flash evaporation technique. Growth, structural, and optical characterization. physica status solidi (a), 108 (1). 257-264 doi:10.1002/pssa.2211080126
In(1988, July) physica status solidi (a) Vol. 108 (1) Wiley

See Also

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Weinert, H., Jarašiūnas, K., Schumann, B. (1989) Carrier Diffusion and Recombination in Type II GaAs/CaxSr1−xF2 Quantum Well Heterostructures Studied by the Transient Grating Technique. physica status solidi (a), 114 (2). doi:10.1002/pssa.2211140254
Flagmeyer, R., Krause, H., Oelgart, G., Rohde, G. (1991) Characterization of InGaAs/InP Single Quantum Well Structures by Rutherford Backscattering Spectrometry. physica status solidi (a), 124 (1). 265-272 doi:10.1002/pssa.2211240125
Flagmeyer, R., Frey, H., Gottschalch, V. (1988) Internal distortion in GaInAsP quaternary alloys studied by ion channeling. physica status solidi (a), 108 (1). 123-128 doi:10.1002/pssa.2211080109
Flagmeyer, R., Oelgart, G., Kreher, K., Schwabe, R., Bugge, F., Lehmann, L., Jacobs, K. (1989) Characterization of MOCVD Grown (Al, Ga)As/GaAs Single Quantum Well Structures by Rutherford Backscattering and Photoluminescence Spectroscopy. physica status solidi (a), 111 (2). 541-550 doi:10.1002/pssa.2211110219
Flagmeyer, R., Schumann, B. (1986) Rutherford Backscattering/Channeling Analyses of Lattice-Matched Ca0.43Sr0.57F2 Films on GaAs. physica status solidi (a), 93 (2). doi:10.1002/pssa.2210930242
Hörig, W., Neumann, H., Reccius, E., Weinert, H., Kühn, G., Schumann, B. (1979) Temperature dependence of the absorption edge in CuGaS2. physica status solidi (a), 51 (1). 57-62 doi:10.1002/pssa.2210510105
Drüsedau, T., Eckler, M., Bindemann, R. (1988) Photoconductive a-Si: H with dominant monohydride bonding prepared by DC-Magnetron sputtering. physica status solidi (a), 108 (1). 285-293 doi:10.1002/pssa.2211080129
Baumbach, G. T., Rhan, H., Pietsch, U. (1988) Detection of the active layer of AIIIBV semiconductor quantum-well structures by high resolution X-ray diffractometry. physica status solidi (a), 109 (1). doi:10.1002/pssa.2211090142
Ascheron, C., Schindler, A., Flagmeyer, R., Otto, G. (1989) Characterization of Irradiation-Induced Lattice Disorder by Dilatometric Measurements. physica status solidi (a), 112 (1). 391-394 doi:10.1002/pssa.2211120152
Flagmeyer, R., Lenkeit, K., Baumbach, T., Kanter, Yu. O., Fedorov, A. A. (1988) Characterization of InxGa1−xAs/GaAs strained layer superlattices by ion backscattering-channeling and X-ray diffraction. physica status solidi (a), 107 (1). doi:10.1002/pssa.2211070151
(1988) Masthead. physica status solidi (a), 108 (1). doi:10.1002/pssa.2211080101
 
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