Hetterich, M., Löffler, W., Fallert, J., Höpcke, N., Burger, H., Passow, T., Li, S., Daniel, B., Ramadout, B., Lupaca-Schomber, J., Hetterich, J., Litvinov, D., Gerthsen, D., Klingshirn, C., Kalt, H. (2006) Electrical spin injection into InGa(N)As quantum structures and single InGaAs quantum dots. physica status solidi (b), 243 (14). 3812-3824 doi:10.1002/pssb.200672120

See Also

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	Löffler, W., Tröndle, D., Fallert, J., Tsitsishvili, E., Kalt, H., Litvinov, D., Gerthsen, D., Lupaca-Schomber, J., Passow, T., Daniel, B., Kvietkova, J., Hetterich, M. (2006) Electrical spin injection into InGaAs quantum dots. physica status solidi (c), 3 (7). 2406-2409 doi:10.1002/pssc.200668004
	Löffler, W., Tröndle, D., Fallert, J., Kalt, H., Litvinov, D., Gerthsen, D., Lupaca-Schomber, J., Passow, T., Daniel, B., Kvietkova, J., Grün, M., Klingshirn, C., Hetterich, M. (2006) Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots. Applied Physics Letters, 88 (6). 62105pp. doi:10.1063/1.2172221
	Passow, T., Li, S., Litvinov, D., Löffler, W., Fallert, J., Daniel, B., Lupaca-Schomber, J., Kvietková, J., Gerthsen, D., Kalt, H., Hetterich, M. (2006) Investigation of InAs quantum dot growth for electrical spin injection devices. physica status solidi (c), 3 (11). 3943-3946 doi:10.1002/pssc.200671556
	Löffler, W, Höpcke, N, Mauser, C, Fallert, J, Passow, T, Daniel, B, Li, S, Litvinov, D, Gerthsen, D, Kalt, H, Hetterich, M (2007) Spin and carrier relaxation dynamics in InAs/GaAs quantum-dot spin-LEDs. Journal of Physics: Conference Series, 61. 745-749 doi:10.1088/1742-6596/61/1/149
	Löffler, W., Hetterich, M., Mauser, C., Li, S., Leuthold, J., Kalt, H. (2008) Spin-polarized excitonic emission from quantum dots after electrical injection. physica status solidi (b), 245 (6). 1102-1105 doi:10.1002/pssb.200777612
	Hetterich, M., Löffler, W., Aßhoff, P., Flügge, H., Müller, J., Westenfelder, B., Hu, D. Z., Schaadt, D. M., Kalt, H. (2009) Electrical spin injection into InGaAs quantum dots: single dot devices and time-resolved studies. physica status solidi (c), 6 (2). 432-435 doi:10.1002/pssc.200880301
	Weber, F. M., Karl, M., Lupaca-Schomber, J., Löffler, W., Li, S., Passow, T., Hawecker, J., Gerthsen, D., Kalt, H., Hetterich, M. (2007) Optical modes in pyramidal GaAs microcavities. Applied Physics Letters, 90 (16). 161104pp. doi:10.1063/1.2723688
	Litvinov, D., Blank, H., Schneider, R., Gerthsen, D., Vallaitis, T., Leuthold, J., Passow, T., Grau, A., Kalt, H., Klingshirn, C., Hetterich, M. (2008) Influence of InGaAs cap layers with different In concentration on the properties of InGaAs quantum dots. Journal of Applied Physics, 103 (8). 83532pp. doi:10.1063/1.2903143
	Litvinov, D., Schowalter, M., Rosenauer, A., Daniel, B., Fallert, J., Löffler, W., Kalt, H., Hetterich, M. (2008) Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy. physica status solidi (a), 205 (12). 2892-2897 doi:10.1002/pssa.200824151
	Hetterich, M., Asshoff, P., Wüst, G., Merz, A., Kalt, H. (2011) Nuclear spin-polarization in single InGaAs quantum dots through electrical and optical spin-injection in spin-LEDs. physica status solidi (c), 8 (4). 1157-1160 doi:10.1002/pssc.201000822
	Löffler, W., Hetterich, M., Mauser, C., Li, S., Passow, T., Kalt, H. (2007) Parallel preparation of highly spin-polarized electrons in single InAs∕GaAs quantum dots. Applied Physics Letters, 90 (23). 232105pp. doi:10.1063/1.2746405