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Garfunkel, G. A., Weissman, M. B. (1985) 1/f noise and the field effect in gated resistors. Journal of Applied Physics, 57 (2). 634-636 doi:10.1063/1.334755

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Reference TypeJournal (article/letter/editorial)
Title1/f noise and the field effect in gated resistors
JournalJournal of Applied Physics
AuthorsGarfunkel, G. A.Author
Weissman, M. B.Author
Year1985 (January 15)Volume57
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.334755Search in ResearchGate
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Mindat Ref. ID5021993Long-form Identifiermindat:1:5:5021993:5
GUID0
Full ReferenceGarfunkel, G. A., Weissman, M. B. (1985) 1/f noise and the field effect in gated resistors. Journal of Applied Physics, 57 (2). 634-636 doi:10.1063/1.334755
Plain TextGarfunkel, G. A., Weissman, M. B. (1985) 1/f noise and the field effect in gated resistors. Journal of Applied Physics, 57 (2). 634-636 doi:10.1063/1.334755
In(1985, January) Journal of Applied Physics Vol. 57 (2) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Weissman, M. B. (1980) Relations between geometrical factors for noise magnitudes in resistors. Journal of Applied Physics, 51 (11). 5872-5875 doi:10.1063/1.327550
Garfunkel, G. A., Weissman, M. B. (1985) Noise scaling in continuum percolating films. Physical Review Letters, 55 (3). 296-299 doi:10.1103/physrevlett.55.296
Weissman, Michael B., Dollinger, Gavin D. (1981) Noise from equilibrium enthalpy fluctuations in resistors. Journal of Applied Physics, 52 (5). 3095-3098 doi:10.1063/1.329171
Garfunkel, G. A., Alers, G. B., Weissman, M. B. (1990) Mesoscopic noise studies of atomic motions in cold amorphous conductors. Physical Review B, 41 (8) 4901-4919 doi:10.1103/physrevb.41.4901
Karwath, A., Schulz, M. (1988) Deep level transient spectroscopy on single, isolated interface traps in field‐effect transistors. Applied Physics Letters, 52 (8). 634-636 doi:10.1063/1.99388
Tarasov, A., Fu, W., Knopfmacher, O., Brunner, J., Calame, M., Schönenberger, C. (2011) Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors. Applied Physics Letters, 98 (1). 12114pp. doi:10.1063/1.3536674
Weinberg, Z. A., Fischetti, M. V. (1985) Investigation of the SiO2‐induced substrate current in silicon field‐effect transistors. Journal of Applied Physics, 57 (2). 443-452 doi:10.1063/1.334771
Leburton, J.-P., Lyanda-Geller, Yu. B. (1997) Tunable negative differential resistance in anti-dot diffraction field effect transistor. Applied Physics Letters, 70 (5). 634-636 doi:10.1063/1.118212
Chaste, J., Pallecchi, E., Morfin, P., Fève, G., Kontos, T., Berroir, J.-M., Hakonen, P., Plaçais, B. (2010) Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters, 96 (19). 192103pp. doi:10.1063/1.3425889
Buot, F. A., Anderson, W. T., Christou, A., Campbell, A. B., Knudson, A. R. (1985) A mechanism for radiation‐induced degradation in GaAs field‐effect transistors. Journal of Applied Physics, 57 (2). 581-590 doi:10.1063/1.334741
Folkes, P. A. (1990) Fluctuating deep‐level trap occupancy model for 1/f noise in semiconductor resistors. Journal of Applied Physics, 68 (12). 6279-6288 doi:10.1063/1.346870
 
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