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Qi, Lin, Sun, Benzhe, Wang, Weizhen, Zhang, Jian, Yang, Huazhe, Qi, Yang (2019) Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity. CrystEngComm, 21. 791-795 doi:10.1039/c8ce01794h

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Reference TypeJournal (article/letter/editorial)
TitleMicrostructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity
JournalCrystEngComm
AuthorsQi, LinAuthor
Sun, BenzheAuthor
Wang, WeizhenAuthor
Zhang, JianAuthor
Yang, HuazheAuthor
Qi, YangAuthor
Year2019Volume21
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c8ce01794hSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID4455047Long-form Identifiermindat:1:5:4455047:9
GUID0
Full ReferenceQi, Lin, Sun, Benzhe, Wang, Weizhen, Zhang, Jian, Yang, Huazhe, Qi, Yang (2019) Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity. CrystEngComm, 21. 791-795 doi:10.1039/c8ce01794h
Plain TextQi, Lin, Sun, Benzhe, Wang, Weizhen, Zhang, Jian, Yang, Huazhe, Qi, Yang (2019) Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity. CrystEngComm, 21. 791-795 doi:10.1039/c8ce01794h
In(2019) CrystEngComm Vol. 21. Royal Society of Chemistry (RSC)

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