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Takagaki, Y., Jenichen, B., Trampert, A. (2018) Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111). CrystEngComm, 20. 983-989 doi:10.1039/c7ce02021j

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Reference TypeJournal (article/letter/editorial)
TitleManifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111)
JournalCrystEngComm
AuthorsTakagaki, Y.Author
Jenichen, B.Author
Trampert, A.Author
Year2018Volume20
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c7ce02021jSearch in ResearchGate
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Mindat Ref. ID4454094Long-form Identifiermindat:1:5:4454094:0
GUID0
Full ReferenceTakagaki, Y., Jenichen, B., Trampert, A. (2018) Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111). CrystEngComm, 20. 983-989 doi:10.1039/c7ce02021j
Plain TextTakagaki, Y., Jenichen, B., Trampert, A. (2018) Manifestation of axiotaxy induced by the (10.4) plane in high-temperature-grown bismuth telluride films on InP(111). CrystEngComm, 20. 983-989 doi:10.1039/c7ce02021j
In(2018) CrystEngComm Vol. 20. Royal Society of Chemistry (RSC)

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(2017) Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy. Crystal Growth & Design, 17 (4) 1977-1981 doi:10.1021/acs.cgd.6b01899
Takagaki, Y., Jenichen, B., Tominaga, J. (2013) Giant corrugations in Bi2Se3layers grown on high-index InP substrates. Physical Review B, 87 (24) doi:10.1103/physrevb.87.245302
Takagaki, Yukihiko, Jenichen, Bernd, Brandt, Oliver (2019) Semicoherent growth of single-crystal β-In2S3 layers on InP(111) and InAs(111). CrystEngComm, 21. 5818-5823 doi:10.1039/c9ce01135h
Takagaki, Y., Herrmann, C., Jenichen, B., Herfort, J., Brandt, O. (2008) Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy. Applied Physics Letters, 92 (10). 101918pp. doi:10.1063/1.2896616
Takagaki, Yukihiko, Herfort, Jens, Ramsteiner, Manfred, Jahn, Uwe, Jenichen, Bernd (2018) Overgrowth of Bi2Te3 nanoislands on Fe-based epitaxial ferromagnetic layers. CrystEngComm, 20. 4173-4178 doi:10.1039/c8ce00882e
Takagaki, Y, Ramsteiner, M, Jahn, U, Jenichen, B, Trampert, A (2019) Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions. Journal of Physics D: Applied Physics, 52. 385101pp. doi:10.1088/1361-6463/ab2cbb
Takagaki, Y., Herrmann, C., Jenichen, B., Herfort, J., Brandt, O. (2008) Erratum: “Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy” [Appl. Phys. Lett. 92, 101918 (2008)]. Applied Physics Letters, 92 (17). 179901pp. doi:10.1063/1.2917875
Takagaki, Y., Herrmann, C., Jenichen, B., Brandt, O. (2008) Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization. Physical Review B, 78 (6) doi:10.1103/physrevb.78.064115
Aleksandrova, Anna, Golz, Christian, Biermann, Klaus, Trampert, Achim, Semtsiv, Mykhaylo, Weidlich, Helmut, Masselink, William Ted, Takagaki, Yukihiko (2023) Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases. CrystEngComm, 25 (39) 5541-5547 doi:10.1039/d3ce00010a
Hentschel, T, Jenichen, B, Trampert, A, Herfort, J (2012) Ferromagnetic Heusler alloy Co2FeSi films on GaAs(1 1 0) grown by molecular beam epitaxy. Journal of Physics D: Applied Physics, 45. 55002pp. doi:10.1088/0022-3727/45/5/055002
Takagaki, Y., Jenichen, B., Ramsteiner, M., Trampert, A. (2020) Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi–Cu–Se, Bi–Ag–Se, and Sb–Cu–Te alloys. Journal of Alloys and Compounds, 824. 153880pp. doi:10.1016/j.jallcom.2020.153880
 
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