| Reference Type | Journal (article/letter/editorial) |
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| Title | In Situ Processing of Silicon Carbide Layer Structures |
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| Journal | Journal of the American Ceramic Society |
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| Authors | Padture, Nitin P. | Author |
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| Pender, David C. | Author |
| Wuttiphan, Sataporn | Author |
| Lawn, Brian R. | Author |
| Year | 1995 (November) | Volume | 78 |
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| Issue | 11 |
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| Publisher | Wiley |
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| DOI | doi:10.1111/j.1151-2916.1995.tb09104.xSearch in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 4092148 | Long-form Identifier | mindat:1:5:4092148:4 |
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| GUID | 0 |
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| Full Reference | Padture, Nitin P., Pender, David C., Wuttiphan, Sataporn, Lawn, Brian R. (1995) In Situ Processing of Silicon Carbide Layer Structures. Journal of the American Ceramic Society, 78 (11). 3160-3162 doi:10.1111/j.1151-2916.1995.tb09104.x |
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| Plain Text | Padture, Nitin P., Pender, David C., Wuttiphan, Sataporn, Lawn, Brian R. (1995) In Situ Processing of Silicon Carbide Layer Structures. Journal of the American Ceramic Society, 78 (11). 3160-3162 doi:10.1111/j.1151-2916.1995.tb09104.x |
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| In | (1995, November) Journal of the American Ceramic Society Vol. 78 (11) Wiley |
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These are possibly similar items as determined by title/reference text matching only.