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Jin, Weifeng, Mu, Xiaojing, Zhang, Kun, Shang, Zhengguo, Dai, Lun (2018) Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions. Physical Chemistry Chemical Physics, 20 (30). 19932-19937 doi:10.1039/c8cp02859a

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions
JournalPhysical Chemistry Chemical Physics
AuthorsJin, WeifengAuthor
Mu, XiaojingAuthor
Zhang, KunAuthor
Shang, ZhengguoAuthor
Dai, LunAuthor
Year2018Volume20
Issue30
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c8cp02859aSearch in ResearchGate
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Mindat Ref. ID4034239Long-form Identifiermindat:1:5:4034239:5
GUID0
Full ReferenceJin, Weifeng, Mu, Xiaojing, Zhang, Kun, Shang, Zhengguo, Dai, Lun (2018) Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions. Physical Chemistry Chemical Physics, 20 (30). 19932-19937 doi:10.1039/c8cp02859a
Plain TextJin, Weifeng, Mu, Xiaojing, Zhang, Kun, Shang, Zhengguo, Dai, Lun (2018) Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions. Physical Chemistry Chemical Physics, 20 (30). 19932-19937 doi:10.1039/c8cp02859a
In(2018) Physical Chemistry Chemical Physics Vol. 20 (30) Royal Society of Chemistry (RSC)

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