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Engel, J., Tuller, H. L. (2014) The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation. Physical Chemistry Chemical Physics, 16 (23). 11374pp. doi:10.1039/c4cp01144a

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Reference TypeJournal (article/letter/editorial)
TitleThe electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation
JournalPhysical Chemistry Chemical Physics
AuthorsEngel, J.Author
Tuller, H. L.Author
Year2014Volume16
Issue23
PublisherRoyal Society of Chemistry (RSC)
DOIdoi:10.1039/c4cp01144aSearch in ResearchGate
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Mindat Ref. ID4021150Long-form Identifiermindat:1:5:4021150:9
GUID0
Full ReferenceEngel, J., Tuller, H. L. (2014) The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation. Physical Chemistry Chemical Physics, 16 (23). 11374pp. doi:10.1039/c4cp01144a
Plain TextEngel, J., Tuller, H. L. (2014) The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation. Physical Chemistry Chemical Physics, 16 (23). 11374pp. doi:10.1039/c4cp01144a
In(2014) Physical Chemistry Chemical Physics Vol. 16 (23) Royal Society of Chemistry (RSC)

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Shousha, Shehab, Khalil, Sarah, Youssef, Mostafa (2021) A complete ab initio thermodynamic and kinetic catalogue of the defect chemistry of hematite α-Fe2O3, its cation diffusion, and sample donor dopants. Physical Chemistry Chemical Physics, 23 (45) 25518-25532 doi:10.1039/d1cp03394h
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