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Lavrentiev, A. A., Gabrel’yan, B. V., Nikiforov, I. Ya., Vorzhev, V. B. (2005) Electronic energy structure of As2S3, AsSI, AgAsS2, and TiS2 semiconductors. Journal of Structural Chemistry, 46 (5). 805-812 doi:10.1007/s10947-006-0204-0

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Reference TypeJournal (article/letter/editorial)
TitleElectronic energy structure of As2S3, AsSI, AgAsS2, and TiS2 semiconductors
JournalJournal of Structural Chemistry
AuthorsLavrentiev, A. A.Author
Gabrel’yan, B. V.Author
Nikiforov, I. Ya.Author
Vorzhev, V. B.Author
Year2005 (September)Volume46
Issue5
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10947-006-0204-0Search in ResearchGate
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Mindat Ref. ID3143374Long-form Identifiermindat:1:5:3143374:7
GUID0
Full ReferenceLavrentiev, A. A., Gabrel’yan, B. V., Nikiforov, I. Ya., Vorzhev, V. B. (2005) Electronic energy structure of As2S3, AsSI, AgAsS2, and TiS2 semiconductors. Journal of Structural Chemistry, 46 (5). 805-812 doi:10.1007/s10947-006-0204-0
Plain TextLavrentiev, A. A., Gabrel’yan, B. V., Nikiforov, I. Ya., Vorzhev, V. B. (2005) Electronic energy structure of As2S3, AsSI, AgAsS2, and TiS2 semiconductors. Journal of Structural Chemistry, 46 (5). 805-812 doi:10.1007/s10947-006-0204-0
In(2005, September) Journal of Structural Chemistry Vol. 46 (5) Springer Science and Business Media LLC

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