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Cotton, Dominique, Jacquet, Philippe, Faure, Sébastien, Vignal, Vincent (2017) Epitaxial growth of tantalum carbides by low carbon flow carburizing. Materials Chemistry and Physics, 192. 170-180 doi:10.1016/j.matchemphys.2016.12.063

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of tantalum carbides by low carbon flow carburizing
JournalMaterials Chemistry and Physics
AuthorsCotton, DominiqueAuthor
Jacquet, PhilippeAuthor
Faure, SébastienAuthor
Vignal, VincentAuthor
Year2017 (May)Volume192
PublisherElsevier BV
DOIdoi:10.1016/j.matchemphys.2016.12.063Search in ResearchGate
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Mindat Ref. ID3063341Long-form Identifiermindat:1:5:3063341:0
GUID0
Full ReferenceCotton, Dominique, Jacquet, Philippe, Faure, Sébastien, Vignal, Vincent (2017) Epitaxial growth of tantalum carbides by low carbon flow carburizing. Materials Chemistry and Physics, 192. 170-180 doi:10.1016/j.matchemphys.2016.12.063
Plain TextCotton, Dominique, Jacquet, Philippe, Faure, Sébastien, Vignal, Vincent (2017) Epitaxial growth of tantalum carbides by low carbon flow carburizing. Materials Chemistry and Physics, 192. 170-180 doi:10.1016/j.matchemphys.2016.12.063
In(2017) Materials Chemistry and Physics Vol. 192. Elsevier BV

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