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Mi, Wei, Ma, Jin, Zhu, Zhen, Luan, Caina, Lv, Yu, Xiao, Hongdi (2012) Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition. Journal of Crystal Growth, 354 (1). 93-97 doi:10.1016/j.jcrysgro.2012.06.022

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition
JournalJournal of Crystal Growth
AuthorsMi, WeiAuthor
Ma, JinAuthor
Zhu, ZhenAuthor
Luan, CainaAuthor
Lv, YuAuthor
Xiao, HongdiAuthor
Year2012 (September)Volume354
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2012.06.022Search in ResearchGate
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Mindat Ref. ID2903786Long-form Identifiermindat:1:5:2903786:9
GUID0
Full ReferenceMi, Wei, Ma, Jin, Zhu, Zhen, Luan, Caina, Lv, Yu, Xiao, Hongdi (2012) Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition. Journal of Crystal Growth, 354 (1). 93-97 doi:10.1016/j.jcrysgro.2012.06.022
Plain TextMi, Wei, Ma, Jin, Zhu, Zhen, Luan, Caina, Lv, Yu, Xiao, Hongdi (2012) Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition. Journal of Crystal Growth, 354 (1). 93-97 doi:10.1016/j.jcrysgro.2012.06.022
In(2012, September) Journal of Crystal Growth Vol. 354 (1) Elsevier BV

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Mi, Wei, Ma, Jin, Luan, Caina, Lv, Yu, Xiao, Hongdi, Li, Zhao (2012) Characterization of β-Ga2O3 epitaxial films grown on MgO (111) substrates by metal-organic chemical vapor deposition. Materials Letters, 87. 109-112 doi:10.1016/j.matlet.2012.07.106
Du, Xuejian, Mi, Wei, Luan, Caina, Li, Zhao, Xia, Changtai, Ma, Jin (2014) Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition. Journal of Crystal Growth, 404. 75-79 doi:10.1016/j.jcrysgro.2014.07.011
Mi, Wei, Ma, Jin, Luan, Caina, Xiao, Hongdi (2014) Structural and optical properties of β-Ga2O3 films deposited on MgAl2O4 (1 0 0) substrates by metal–organic chemical vapor deposition. Journal of Luminescence, 146. 1-5 doi:10.1016/j.jlumin.2013.09.056
Mi, Wei, Du, Xuejian, Luan, Caina, Xiao, Hongdi, Ma, Jin (2014) Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD. RSC Advances, 4 (58). 30579pp. doi:10.1039/c4ra02479f
Zhao, Wei, Feng, Xianjin, Xiao, Hongdi, Luan, Caina, Ma, Jin (2016) Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVD. Journal of Crystal Growth, 453. 106-110 doi:10.1016/j.jcrysgro.2016.08.020
Luan, Caina; Zhang, Biao; Luo, Yuhao; Wang, Yuankang; Duan, Jingtian; Zhu, Hongyan; Ma, Jin; Xiao, Hongdi (2026) Epitaxial growth of cubic ZnTiO3 epitaxial films on m-Al2O3 (30 3 ‾ 0) substrate by pulsed laser deposition. Ceramics International, 52 (1). doi:10.1016/j.ceramint.2025.11.394
Zhu, Zhen, Ma, Jin, Kong, Lingyi, Luan, Caina, Yu, Qiaoqun (2011) Heteroepitaxy of SnO2 thin films on m-plane sapphire by MOCVD. Journal of Crystal Growth, 324 (1). 98-102 doi:10.1016/j.jcrysgro.2011.04.024
He, Linan, Luan, Caina, Feng, Xianjin, Xiao, Hongdi, Yang, Xiaokun, Wang, Di, Ma, Jin (2019) UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition. Materials Research Bulletin, 118. 110488pp. doi:10.1016/j.materresbull.2019.05.013
Luan, Caina, Ma, Jin, Zhu, Zhen, Kong, Lingyi, Yu, Qiaoqun (2011) Preparation and characterization of single crystalline SnO2 films deposited on TiO2 (001) by MOCVD. Journal of Crystal Growth, 318 (1). 599-601 doi:10.1016/j.jcrysgro.2010.10.056
Mi, Wei, Li, Zhao, Luan, Caina, Xiao, Hongdi, Zhao, Cansong, Ma, Jin (2015) Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD. Ceramics International, 41. 2572-2575 doi:10.1016/j.ceramint.2014.11.004
Wang, Di, Ma, Xiaochen, Xiao, Hongdi, Chen, Rongrong, Le, Yong, Luan, Caina, Zhang, Biao, Ma, Jin (2022) Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD. Materials Research Bulletin, 149. 111718pp. doi:10.1016/j.materresbull.2021.111718
 
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