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Kadoiwa, Kaoru, Ono, Kenichi, Ohkura, Yuji (2006) Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD. Journal of Crystal Growth, 297 (1). 44-51 doi:10.1016/j.jcrysgro.2006.09.028

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Reference TypeJournal (article/letter/editorial)
TitleZn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD
JournalJournal of Crystal Growth
AuthorsKadoiwa, KaoruAuthor
Ono, KenichiAuthor
Ohkura, YujiAuthor
Year2006 (December)Volume297
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2006.09.028Search in ResearchGate
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Mindat Ref. ID2887260Long-form Identifiermindat:1:5:2887260:9
GUID0
Full ReferenceKadoiwa, Kaoru, Ono, Kenichi, Ohkura, Yuji (2006) Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD. Journal of Crystal Growth, 297 (1). 44-51 doi:10.1016/j.jcrysgro.2006.09.028
Plain TextKadoiwa, Kaoru, Ono, Kenichi, Ohkura, Yuji (2006) Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD. Journal of Crystal Growth, 297 (1). 44-51 doi:10.1016/j.jcrysgro.2006.09.028
In(2006, December) Journal of Crystal Growth Vol. 297 (1) Elsevier BV

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Kadoiwa, Kaoru, Ono, Kenichi, Nishiguchi, Harumi, Matsumoto, Keisuke, Ohkura, Yuji, Yagi, Tetsuya (2006) p-Substrate Partially Inverted Buried Heterostructure Distributed Feedback Laser Diode Performance Improvement by Inserting Zn Diffusion-Stopping Layer. Japanese Journal of Applied Physics, 45 (10) 7704-7708 doi:10.1143/jjap.45.7704
Ono, Kenichi, Takemi, Masayoshi (2007) Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPE. Journal of Crystal Growth, 298. 41-45 doi:10.1016/j.jcrysgro.2006.10.065
Skogen, Erik J., Barton, Jonathon S., Raring, James W., Coldren, Larry A., Denbaars, Steven P. (2004) High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP. Journal of Crystal Growth, 272 (1). 564-569 doi:10.1016/j.jcrysgro.2004.09.008
Yoshida, N., Kimura, T., Mizuguchi, K., Ohkura, Y., Murotani, T., Kawagishi, A. (1988) Extremely low threshold InGaAsP/InP DFB laser by MOCVD/LPE hybrid process. Journal of Crystal Growth, 93 (1). 832-837 doi:10.1016/0022-0248(88)90627-6
Kitatani, T., Taike, A., Aoki, M. (2004) Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy. Journal of Crystal Growth, 273 (1). 19-25 doi:10.1016/j.jcrysgro.2004.07.094
Salehzadeh, O., He, C., Benyon, W., SpringThorpe, A.J. (2016) The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD. Journal of Crystal Growth, 445. 110-114 doi:10.1016/j.jcrysgro.2016.04.053
Dong, J.R., Teng, J.H., Chua, S.J., Wang, Y.J., Foo, B.C., Yin, R. (2005) InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs. Journal of Crystal Growth, 281 (2). 323-327 doi:10.1016/j.jcrysgro.2005.04.060
Liu, H.G, Wu, J.Q, Tao, N, Firth, A.V, Griswold, E.M, MacElwee, T.W, Bolognesi, C.R (2004) High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3. Journal of Crystal Growth, 267 (3). 592-597 doi:10.1016/j.jcrysgro.2004.04.035
Zhang, B.L, Tang, X.H, Huang, G.S, Zhu, J.Y (2004) Study of InGaAsP and GaInP layers grown by MOCVD in pure N2 ambient for InGaAsP/GaAs single QW LD structures. Journal of Crystal Growth, 268 (3). 396-400 doi:10.1016/j.jcrysgro.2004.04.061
Knight, D.G., Miner, C.J., Watt, B. (1991) Effect of wafer cleavage on composition of InGaAsP grown on InP by low pressure MOCVD. Journal of Crystal Growth, 107 (1). 221-225 doi:10.1016/0022-0248(91)90460-m
Yokoyama, M., Ohya, S., Tanaka, M. (2007) Molecular beam epitaxy growth, magnetic and structural properties of MnAs thin films grown on InP(001) and InGaAsP. Journal of Crystal Growth, 301. 615-618 doi:10.1016/j.jcrysgro.2006.11.156
 
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