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Vartak, Bhushan, Yeckel, Andrew, Derby, Jeffrey J. (2005) On the validity of boundary layer analysis for flow and mass transfer caused by rotation during the solution growth of large, single crystals. Journal of Crystal Growth, 283 (3). 479-489 doi:10.1016/j.jcrysgro.2005.06.003

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Reference TypeJournal (article/letter/editorial)
TitleOn the validity of boundary layer analysis for flow and mass transfer caused by rotation during the solution growth of large, single crystals
JournalJournal of Crystal Growth
AuthorsVartak, BhushanAuthor
Yeckel, AndrewAuthor
Derby, Jeffrey J.Author
Year2005 (October)Volume283
Issue3
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2005.06.003Search in ResearchGate
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Mindat Ref. ID2883418Long-form Identifiermindat:1:5:2883418:6
GUID0
Full ReferenceVartak, Bhushan, Yeckel, Andrew, Derby, Jeffrey J. (2005) On the validity of boundary layer analysis for flow and mass transfer caused by rotation during the solution growth of large, single crystals. Journal of Crystal Growth, 283 (3). 479-489 doi:10.1016/j.jcrysgro.2005.06.003
Plain TextVartak, Bhushan, Yeckel, Andrew, Derby, Jeffrey J. (2005) On the validity of boundary layer analysis for flow and mass transfer caused by rotation during the solution growth of large, single crystals. Journal of Crystal Growth, 283 (3). 479-489 doi:10.1016/j.jcrysgro.2005.06.003
In(2005, October) Journal of Crystal Growth Vol. 283 (3) Elsevier BV

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Vartak, Bhushan, Yeckel, Andrew, Derby, Jeffrey J. (2005) Time-dependent, three-dimensional flow and mass transport during solution growth of potassium titanyl phosphate. Journal of Crystal Growth, 281 (2). 391-406 doi:10.1016/j.jcrysgro.2005.04.037
Vartak, Bhushan, Kwon, Yong-Il, Yeckel, Andrew, Derby, Jeffrey J. (2000) An analysis of flow and mass transfer during the solution growth of potassium titanyl phosphate. Journal of Crystal Growth, 210 (4). 704-718 doi:10.1016/s0022-0248(99)00729-0
Tao, Yutao, Yeckel, Andrew, Derby, Jeffrey J. (2016) Analysis of particle engulfment during the growth of crystalline silicon. Journal of Crystal Growth, 452. 1-5 doi:10.1016/j.jcrysgro.2015.12.037
Daggolu, Parthiv, Yeckel, Andrew, Derby, Jeffrey J. (2014) An analysis of segregation during horizontal ribbon growth of silicon. Journal of Crystal Growth, 390. 80-87 doi:10.1016/j.jcrysgro.2013.12.021
Vartak, Bhushan, Derby, Jeffrey J. (2001) On stable algorithms and accurate solutions for convection-dominated mass transfer in crystal growth modeling. Journal of Crystal Growth, 230 (1). 202-209 doi:10.1016/s0022-0248(01)01344-6
Daggolu, Parthiv, Yeckel, Andrew, Bleil, Carl E., Derby, Jeffrey J. (2013) Stability limits for the horizontal ribbon growth of silicon crystals. Journal of Crystal Growth, 363. 132-140 doi:10.1016/j.jcrysgro.2012.10.024
Stelian, Camen, Yeckel, Andrew, Derby, Jeffrey J. (2009) Influence of thermal phenomena on crystal reattachment during dewetted Bridgman growth. Journal of Crystal Growth, 311 (8). 2572-2579 doi:10.1016/j.jcrysgro.2009.02.012
Daggolu, Parthiv, Yeckel, Andrew, Bleil, Carl E., Derby, Jeffrey J. (2012) Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals. Journal of Crystal Growth, 355 (1). 129-139 doi:10.1016/j.jcrysgro.2012.06.055
Derby, Jeffrey J., Lun, Lisa, Yeckel, Andrew (2007) Strategies for the coupling of global and local crystal growth models. Journal of Crystal Growth, 303 (1). 114-123 doi:10.1016/j.jcrysgro.2006.11.343
Peterson, Jeffrey H., Yeckel, Andrew, Fiederle, Michael, Derby, Jeffrey J. (2019) Corrigendum to “Analysis of the traveling heater method for the growth of cadmium telluride” [J. Crystal Growth 454 (2016) 45–58]. Journal of Crystal Growth, 522. 236pp. doi:10.1016/j.jcrysgro.2019.05.032
Peterson, Jeffrey H., Yeckel, Andrew, Derby, Jeffrey J. (2016) A fundamental limitation on growth rates in the traveling heater method. Journal of Crystal Growth, 452. 12-16 doi:10.1016/j.jcrysgro.2015.10.025
 
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