| Reference Type | Journal (article/letter/editorial) |
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| Title | Vertical gradient freezing of doped gallium–antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring |
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| Journal | Journal of Crystal Growth |
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| Authors | Ma, Nancy | Author |
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| Bliss, David F. | Author |
| Iseler, Gerald W. | Author |
| Year | 2003 (November) | Volume | 259 |
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| Issue | 1 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/s0022-0248(03)01575-6Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 2874859 | Long-form Identifier | mindat:1:5:2874859:7 |
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| GUID | 0 |
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| Full Reference | Ma, Nancy, Bliss, David F., Iseler, Gerald W. (2003) Vertical gradient freezing of doped gallium–antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring. Journal of Crystal Growth, 259 (1). 26-35 doi:10.1016/s0022-0248(03)01575-6 |
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| Plain Text | Ma, Nancy, Bliss, David F., Iseler, Gerald W. (2003) Vertical gradient freezing of doped gallium–antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring. Journal of Crystal Growth, 259 (1). 26-35 doi:10.1016/s0022-0248(03)01575-6 |
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| In | (2003, November) Journal of Crystal Growth Vol. 259 (1) Elsevier BV |
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