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Chaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu (1999) Indium droplet formation during molecular beam epitaxy of InGaN. Journal of Crystal Growth, 206 (1). 147-149 doi:10.1016/s0022-0248(99)00298-5

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Reference TypeJournal (article/letter/editorial)
TitleIndium droplet formation during molecular beam epitaxy of InGaN
JournalJournal of Crystal Growth
AuthorsChaly, V.PAuthor
Borisov, B.AAuthor
Demidov, D.MAuthor
Krasovitsky, D.MAuthor
Pogorelsky, Yu.VAuthor
Shkurko, A.PAuthor
Sokolov, I.AAuthor
Karpov, S.YuAuthor
Year1999 (October)Volume206
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(99)00298-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2850100Long-form Identifiermindat:1:5:2850100:2
GUID0
Full ReferenceChaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu (1999) Indium droplet formation during molecular beam epitaxy of InGaN. Journal of Crystal Growth, 206 (1). 147-149 doi:10.1016/s0022-0248(99)00298-5
Plain TextChaly, V.P, Borisov, B.A, Demidov, D.M, Krasovitsky, D.M, Pogorelsky, Yu.V, Shkurko, A.P, Sokolov, I.A, Karpov, S.Yu (1999) Indium droplet formation during molecular beam epitaxy of InGaN. Journal of Crystal Growth, 206 (1). 147-149 doi:10.1016/s0022-0248(99)00298-5
In(1999, October) Journal of Crystal Growth Vol. 206 (1) Elsevier BV

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Chaly, V.P., Demidov, D.M., Fokin, G.A., Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V., Rusanovich, I.Yu., Shkurko, A.P., Ter-Martirosyan, A.L. (1995) Use of molecular beam epitaxy for high-power AlGaAs laser production. Journal of Crystal Growth, 150. 1350-1353 doi:10.1016/0022-0248(95)80158-9
Karpov, S.Yu., Kovalchuk, Yu.V., Myachin, V.E., Pogorelsky, Yu.V. (1994) Nucleation and growth kinetics of GaAs during molecular beam epitaxy. Surface Science, 314 (1). 79-88 doi:10.1016/0039-6028(94)90214-3
Alexeev, A.N., Karpov, S.Yu., Pogorelsky, Yu.V., Sokolov, I.A. (1996) RHEED study of c(4 × 4) → (2 × 4) transition on GaAs(001) surface. Journal of Crystal Growth, 166 (1). 72-77 doi:10.1016/0022-0248(96)00038-3
Karpov, S.Yu., Myachin, V.E., Pogorelsky, Yu.V. (1995) Time-resolved reflection high energy electron diffraction study of dynamical surface processes during molecular beam epitaxy of GaAs and AlAs. Journal of Crystal Growth, 146 (1). 344-348 doi:10.1016/0022-0248(94)00556-7
Alexeev, A.N., Karpov, S.Yu., Maiorov, M.A., Myachin, V.E., Pogorelsky, Yu.V., Sokolov, I.A. (1996) Thermal etching of binary and ternary III–V compounds under vacuum conditions. Journal of Crystal Growth, 166 (1). 167-171 doi:10.1016/0022-0248(96)00040-1
Alexeev, A.N., Karpov, S.Yu. (1996) Conditions of excess liquid phase formation during molecular beam epitaxy of III–V ternary compounds. Journal of Crystal Growth, 162 (1). 15-24 doi:10.1016/0022-0248(95)00922-1
Karpov, S.Yu, Makarov, Yu.N, Ramm, M.S, Talalaev, R.A (1998) Analysis of gallium nitride growth by gas-source molecular beam epitaxy. Journal of Crystal Growth, 187 (3). 397-401 doi:10.1016/s0022-0248(98)00005-0
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Bord, O. V., Talalaev, R. A., Karpov, S. Yu., Makarov, Yu. N. (1999) Indium Incorporation and Droplet Formation during InGaN Molecular Beam Epitaxy. physica status solidi (a), 176 (1). 297-300 doi:10.1002/(sici)1521-396x(199911)176:1<297::aid-pssa297>3.0.co;2-z
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Jang, Kee-Youn, Okada, Yoshitaka, Kawabe, Mitsuo (1999) Effects of atomic hydrogen in molecular beam epitaxy of Al(Ga)As. Journal of Crystal Growth, 206 (4). 267-270 doi:10.1016/s0022-0248(99)00269-9
 
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