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Amon, J, Dumke, F, Müller, G (1998) Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique. Journal of Crystal Growth, 187 (1). 1-8 doi:10.1016/s0022-0248(97)00849-x

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique
JournalJournal of Crystal Growth
AuthorsAmon, JAuthor
Dumke, FAuthor
Müller, GAuthor
Year1998 (April)Volume187
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-0248(97)00849-xSearch in ResearchGate
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Mindat Ref. ID2840751Long-form Identifiermindat:1:5:2840751:1
GUID0
Full ReferenceAmon, J, Dumke, F, Müller, G (1998) Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique. Journal of Crystal Growth, 187 (1). 1-8 doi:10.1016/s0022-0248(97)00849-x
Plain TextAmon, J, Dumke, F, Müller, G (1998) Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique. Journal of Crystal Growth, 187 (1). 1-8 doi:10.1016/s0022-0248(97)00849-x
In(1998, April) Journal of Crystal Growth Vol. 187 (1) Elsevier BV

See Also

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Weimann, H., Amon, J., Jung, Th., Müller, G. (1997) Numerical simulation of the growth of 2″ diameter GaAs crystals by the vertical gradient freeze technique. Journal of Crystal Growth, 180 (3). 560-565 doi:10.1016/s0022-0248(97)00254-6
Amon, J, Berwian, P, Müller, G (1999) Computer-assisted growth of low-EPD GaAs with 3″ diameter by the vertical gradient-freeze technique. Journal of Crystal Growth, 198. 361-366 doi:10.1016/s0022-0248(98)01220-2
Amon, J., Zemke, D., Hoffmann, B., Müller, G. (1996) Growth of 2″ InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization. Journal of Crystal Growth, 166 (1). 646-650 doi:10.1016/0022-0248(96)00039-5
Rasp, M, Birkmann, B, Müller, G (2001) Anomalous interface shapes in the seed well during vertical gradient freeze growth of Si-doped GaAs. Journal of Crystal Growth, 222 (1). 88-95 doi:10.1016/s0022-0248(00)00924-6
Lan, C.W., Song, C.R. (1997) Growth of benzil crystals by vertical dynamic gradient freeze technique in a transparent furnace. Journal of Crystal Growth, 180 (1). 127-135 doi:10.1016/s0022-0248(97)00204-2
Birkmann, B, Rasp, M, Stenzenberger, J, Müller, G (2000) Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method. Journal of Crystal Growth, 211 (1). 157-162 doi:10.1016/s0022-0248(99)00832-5
Sen, Sanghamitra, Wilcox, William R. (1975) Influence of crucible on interface shape, position and sensitivity in the vertical Bridgman-Stockbarger technique. Journal of Crystal Growth, 28 (1). 36-40 doi:10.1016/0022-0248(75)90024-x
Koai, K., Sonnenberg, K., Wenzl, H. (1994) Influence of crucible support and radial heating on the interface shape during vertical Bridgman GaAs growth. Journal of Crystal Growth, 137 (1). 59-63 doi:10.1016/0022-0248(94)91247-5
Plaza, J.L., Diéguez, E. (2001) Influence of the growth rate on the segregation in manganese-doped gallium antimonide grown by the vertical Bridgman technique. Journal of Crystal Growth, 230 (1). 181-187 doi:10.1016/s0022-0248(01)01330-6
Rogin, P., Hulliger, J. (1997) Growth of LiYF4 by the seeded vertical gradient freezing technique. Journal of Crystal Growth, 172 (1). 200-208 doi:10.1016/s0022-0248(96)00716-6
Xiaohua, Liu, Wanqi, Jie, Yaohe, Zhou (2000) Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique. Journal of Crystal Growth, 219 (1). 22-31 doi:10.1016/s0022-0248(00)00601-1
 
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