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Pérez, L.V., Trigubó, A.B., de Reca, N.E.Walsöe (1996) Validation of models for subgrain growth in Hg1 − xCdxTe (MCT) by thermal annealing. Journal of Crystal Growth, 167 (1). 87-92 doi:10.1016/0022-0248(96)00232-1

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Reference TypeJournal (article/letter/editorial)
TitleValidation of models for subgrain growth in Hg1 − xCdxTe (MCT) by thermal annealing
JournalJournal of Crystal Growth
AuthorsPérez, L.V.Author
Trigubó, A.B.Author
de Reca, N.E.WalsöeAuthor
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00232-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829806Long-form Identifiermindat:1:5:2829806:5
GUID0
Full ReferencePérez, L.V., Trigubó, A.B., de Reca, N.E.Walsöe (1996) Validation of models for subgrain growth in Hg1 − xCdxTe (MCT) by thermal annealing. Journal of Crystal Growth, 167 (1). 87-92 doi:10.1016/0022-0248(96)00232-1
Plain TextPérez, L.V., Trigubó, A.B., de Reca, N.E.Walsöe (1996) Validation of models for subgrain growth in Hg1 − xCdxTe (MCT) by thermal annealing. Journal of Crystal Growth, 167 (1). 87-92 doi:10.1016/0022-0248(96)00232-1
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

See Also

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(1996) Statistical evaluation of subgrain size growth in Hg1 − xCdxTe (MCT) Materials Research Bulletin, 31 (6) 723-729 doi:10.1016/0025-5408(96)00047-5
Bagot, D., Rolland, S., Granger, R., Triboulet, R. (1992) Linear thermal expansion coefficient in Hg1-xCdxTe and Hg1−xZnxTe. Journal of Crystal Growth, 117 (1). 189-192 doi:10.1016/0022-0248(92)90742-2
Kaplun, A.B., Meshalkin, A.B. (1996) Stable and metastable phase equilibrium in system Bi2O3GeO2. Journal of Crystal Growth, 167 (1). 171-175 doi:10.1016/0022-0248(96)00090-5
Granger, R., Pelletier, C.M. (1992) Electron mobility evaluation in Hg1−xCdxTe and Hg1−xZnxTe with two-optical-mode dispersion. Journal of Crystal Growth, 117 (1). 203-207 doi:10.1016/0022-0248(92)90745-5
Terada, Toshiyuki, Fujita, Yasuhisa, Fujii, Satoshi, Iuchi, Tohru (1992) Composition control in Hg1−xCdxTe growth by photoassisted MOCVD using an excimer laser. Journal of Crystal Growth, 117 (1). 54-57 doi:10.1016/0022-0248(92)90716-v
Kalish, R., Bahir, G. (1985) Formation of p on n photodiodes in Hg1−xCdxTe by ion implantation and cw CO2 laser annealing. Journal of Crystal Growth, 72 (1). 474-477 doi:10.1016/0022-0248(85)90193-9
Weiss, Eliezer, Benory, Eyal, Kedar, Ehud, Juravel, Yehuda, Frenkel, Avraham (1996) Is Hg1 − xCdxTe grown epitaxially by the travelling heater method? Does it matter?. Journal of Crystal Growth, 166 (1). 745-753 doi:10.1016/0022-0248(96)00142-x
Vydyanath, H.R. (1996) Incorporation of dopants and native defects in bulk Hg1 − xCdxTe crystals and epitaxial layers. Journal of Crystal Growth, 161 (1). 64-72 doi:10.1016/0022-0248(95)00613-3
Liaw, Ing-Ruey, Chou, Kan-Sen, Lin, Ming-Shyong (1988) Thermodynamic analysis of the growth of Hg1−xCdxTe by MOCVD. Journal of Crystal Growth, 87 (4). 529-534 doi:10.1016/0022-0248(88)90101-7
Hähnert, I., Schenk, M. (1990) New defect etchants for CdTe and Hg1-xCdxTe. Journal of Crystal Growth, 101 (1). 251-255 doi:10.1016/0022-0248(90)90976-r
Su, Ching-Hua (1986) Heat capacity, enthalpy of mixing, and thermal conductivity of Hg1−xCdxTe pseudobinary melts. Journal of Crystal Growth, 78 (1). 51-57 doi:10.1016/0022-0248(86)90500-2
 
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