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Prieur, E., Härtwig, J., Garcia, A., Ohler, M., Baruchel, J., Aspar, B., Rolland, G. (1996) Synchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials. Journal of Crystal Growth, 166 (1). 329-333 doi:10.1016/0022-0248(96)00114-5

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Reference TypeJournal (article/letter/editorial)
TitleSynchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials
JournalJournal of Crystal Growth
AuthorsPrieur, E.Author
Härtwig, J.Author
Garcia, A.Author
Ohler, M.Author
Baruchel, J.Author
Aspar, B.Author
Rolland, G.Author
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00114-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829494Long-form Identifiermindat:1:5:2829494:4
GUID0
Full ReferencePrieur, E., Härtwig, J., Garcia, A., Ohler, M., Baruchel, J., Aspar, B., Rolland, G. (1996) Synchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials. Journal of Crystal Growth, 166 (1). 329-333 doi:10.1016/0022-0248(96)00114-5
Plain TextPrieur, E., Härtwig, J., Garcia, A., Ohler, M., Baruchel, J., Aspar, B., Rolland, G. (1996) Synchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials. Journal of Crystal Growth, 166 (1). 329-333 doi:10.1016/0022-0248(96)00114-5
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

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Prieur, E., Ohler, M., Härtwig, J. (1996) X-Ray Topographic Contrast of Threading Dislocations in Silicon on Insulator Structures. physica status solidi (a), 158 (1). 19-34 doi:10.1002/pssa.2211580104
Prieur, E., Guilhalmenc, C., Härtwig, J., Ohler, M., Garcia, A., Aspar, B. (1996) Threading dislocations in silicon layer produced by separation by implanted oxygen process. Journal of Applied Physics, 80 (4). 2113-2120 doi:10.1063/1.363104
Baruchel, J., Schlenker, M., Zarka, A., Petroff, J.F. (1978) Neutron diffraction topographic investigation of growth defects in natural lead carbonate single crystals. Journal of Crystal Growth, 44 (3). 356-362 doi:10.1016/0022-0248(78)90036-2
Martínez-López, J., González-Mañas, M., Caballero, M.A., Diéguez, E., Capelle, B. (1996) Synchrotron X-ray topography of bismuth silicon oxide crystals. Journal of Crystal Growth, 166 (1). 325-328 doi:10.1016/0022-0248(96)00107-8
Ohler, M., Prieur, E., Härtwig, J. (1996) X-ray Moiré Topography on SIMOX Structures. Journal of Applied Crystallography, 29 (5). 568-573 doi:10.1107/s0021889896006401
Prieur, E., Tuomi, T., Partanen, J., Yli-Juuti, E., Tilli, M. (1993) Synchrotron topographic study of defects in liquid-encapsulated Czochralski-grown semi-insulating gallium arsenide wafers. Journal of Crystal Growth, 132 (3). 599-605 doi:10.1016/0022-0248(93)90087-d
Härtwig, J., Köhler, S., Ludwig, W., Moriceau, H., Ohler, M., Prieur, E. (2002) X-ray Diffraction Topography at a Synchrotron Radiation Source Applied to the Study of Bonded Silicon on Insulator Material. Crystal Research and Technology, 37 (7) 705 doi:10.1002/1521-4079(200207)37:7<705::aid-crat705>3.0.co;2-q
Voigt, A., Steiner, B., Dorsch, W., Krinke, J., Albrecht, M., Strunk, H.P., Wagner, G. (1996) Solution growth of silicon on multicrystalline Si substrate: growth velocity, defect structure and electrical activity. Journal of Crystal Growth, 166 (1). 694-699 doi:10.1016/0022-0248(96)00139-x
Barla, K., Bomchil, G., Herino, R., Pfister, J.C., Baruchel, J. (1984) X-ray topographic characterization of porous silicon layers. Journal of Crystal Growth, 68 (3). 721-726 doi:10.1016/0022-0248(84)90110-6
Hauksson, I.S., Suda, J., Tsuka, M., Kawakami, Y., Fujita, Sz., Fujita, Sg. (1996) The role of defects on radiative transitions in nitrogen doped ZnSe. Journal of Crystal Growth, 159 (1). 329-333 doi:10.1016/0022-0248(95)00585-4
Burianek, M., Liebertz, J., Mühlberg, M. (1996) Crystal growth and characterization of LiPbPO4. Journal of Crystal Growth, 166 (1). 361-363 doi:10.1016/0022-0248(96)00047-4
 
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