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Shigeta, Yukichi, Endo, Jiroh, Maki, Kunisuke (1996) A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111). Journal of Crystal Growth, 166 (1). 617-621 doi:10.1016/0022-0248(95)00940-x

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Reference TypeJournal (article/letter/editorial)
TitleA characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111)
JournalJournal of Crystal Growth
AuthorsShigeta, YukichiAuthor
Endo, JirohAuthor
Maki, KunisukeAuthor
Year1996 (September)Volume166
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(95)00940-xSearch in ResearchGate
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Mindat Ref. ID2829123Long-form Identifiermindat:1:5:2829123:9
GUID0
Full ReferenceShigeta, Yukichi, Endo, Jiroh, Maki, Kunisuke (1996) A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111). Journal of Crystal Growth, 166 (1). 617-621 doi:10.1016/0022-0248(95)00940-x
Plain TextShigeta, Yukichi, Endo, Jiroh, Maki, Kunisuke (1996) A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111). Journal of Crystal Growth, 166 (1). 617-621 doi:10.1016/0022-0248(95)00940-x
In(1996, September) Journal of Crystal Growth Vol. 166 (1) Elsevier BV

See Also

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Shigeta, Yukichi, Endo, Jiroh, Maki, Kunisuke (1995) Scanning-tunneling-microscopy study of surface morphology at the initial growth stage of Si on a 7×7 superlattice surface of Si(111) Physical Review B, 51 (3) 2021-2024 doi:10.1103/physrevb.51.2021
Maki, Kunisuke, Shigeta, Yukichi, Kuroda, Toshio (1991) Critical thickness for growth of epitaxial grains in silicon film deposited on superlattice surface of silicon (111). Journal of Crystal Growth, 115 (1). 567-571 doi:10.1016/0022-0248(91)90806-g
Shigeta, Yukichi, Maki, Kunisuke (1990) Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction. Japanese Journal of Applied Physics, 29. 2092-2097 doi:10.1143/jjap.29.2092
Shigeta, Yukichi, Maki, Kunisuke (1989) Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth. Applied Physics Letters, 55 (20). 2078-2080 doi:10.1063/1.102111
Shigeta, Yukichi, Maki, Kunisuke (1994) Annealing effect on an amorphous Si film deposited on a 7×7 superlattice surface of Si(111) studied with low‐energy electron diffraction. Journal of Applied Physics, 75 (10). 5033-5039 doi:10.1063/1.355745
Shigeta, Yukichi, Maki, Kunisuke (1990) Erratum: Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth [Appl. Phys. Lett. 55, 2078 (1989)]. Applied Physics Letters, 56 (3). 301 doi:10.1063/1.103339
SHIGETA, YUKICHI (2000) PHENOMENOLOGICAL VIEW OF NUCLEATION AND GROWTH OF Si ON THE Si(111)-(7×7) SUPERLATTICE. Surface Review and Letters, 7 (1). 61-66 doi:10.1142/s0218625x00000099
Hasegawa, Tsuyoshi, Shimada, Wataru, Tochihara, Hiroshi, Hosoki, Shigeyuki (1996) Dynamic observation of Si-island growth on a Si(111)-7 × 7 surface by high-temperature scanning tunneling microscopy. Journal of Crystal Growth, 166 (1). 314-318 doi:10.1016/0022-0248(95)00492-0
Shigeta, Yukichi, Fujino, Hiroyuki, Maki, Kunisuke (1999) Formation of uniform nanoscale Si islands on a Si(111)-7×7 substrate. Journal of Applied Physics, 86 (2). 881-883 doi:10.1063/1.370818
Shigeta, Y., Endo, J., Fujino, H., Maki, K. (1996) Roughening of the surface of an Si layer grown on an Si(111)-(7 × 7) superlattice. Surface Science, 357. 414-417 doi:10.1016/0039-6028(96)00190-2
Shigeta, Yukichi (1998) Influence of Surface Structure on Epitaxial Growth of Si on Si(111)-(7 × 7) Substrate. Surface Review and Letters, 5 (3). 865-872 doi:10.1142/s0218625x98001237
 
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