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Hirabayashi, Keiji, Hirose, Yoichi (1994) Growth mechanism of flattened diamond crystals synthesized by chemical vapor deposition. Journal of Crystal Growth, 142 (1). 140-146 doi:10.1016/0022-0248(94)90281-x

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Reference TypeJournal (article/letter/editorial)
TitleGrowth mechanism of flattened diamond crystals synthesized by chemical vapor deposition
JournalJournal of Crystal Growth
AuthorsHirabayashi, KeijiAuthor
Hirose, YoichiAuthor
Year1994 (September)Volume142
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(94)90281-xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2818436Long-form Identifiermindat:1:5:2818436:4
GUID0
Full ReferenceHirabayashi, Keiji, Hirose, Yoichi (1994) Growth mechanism of flattened diamond crystals synthesized by chemical vapor deposition. Journal of Crystal Growth, 142 (1). 140-146 doi:10.1016/0022-0248(94)90281-x
Plain TextHirabayashi, Keiji, Hirose, Yoichi (1994) Growth mechanism of flattened diamond crystals synthesized by chemical vapor deposition. Journal of Crystal Growth, 142 (1). 140-146 doi:10.1016/0022-0248(94)90281-x
In(1994, September) Journal of Crystal Growth Vol. 142 (1) Elsevier BV

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Hirabayashi, Keiji, Matsumoto, Seiichiro (1994) Flattened diamond crystals synthesized by microwave plasma chemical vapor deposition in a CO‐H2system. Journal of Applied Physics, 75 (2). 1151-1154 doi:10.1063/1.356500
Hirabayashi, Keiji, Kimura, Takeshi, Hirose, Yoichi (1993) Morphology of flattened diamond crystals synthesized by the oxy‐acetylene flame method. Applied Physics Letters, 62 (4). 354-356 doi:10.1063/1.108955
Louchev, Oleg A. (1994) Radiative / conductive heat transfer mechanism of the limitation in α-HgI2 crystal vapor growth. Journal of Crystal Growth, 142 (1). 124-128 doi:10.1016/0022-0248(94)90278-x
Kushibe, Mitsuhiro, Takaoka, Keiji (1994) New selective metalorganic chemical vapor deposition growth method for InAlAs with high aluminum composition. Journal of Crystal Growth, 145 (1). 263-270 doi:10.1016/0022-0248(94)91061-8
Kobayashi, Takashi, Kurishima, Kenji, Ishibashi, Tadao (1994) Beryllium-doped InGaAs grown by low-pressure metalorganic chemical vapor deposition. Journal of Crystal Growth, 142 (1). 1-4 doi:10.1016/0022-0248(94)90262-3
Chao, C.H., Popovici, G., Charlson, E.J., Charlson, E.M., Meese, J.M., Prelas, M.A. (1994) Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates. Journal of Crystal Growth, 140 (3). 454-458 doi:10.1016/0022-0248(94)90328-x
Cheng, Hsyi-En, Hon, Min-Hsiung (1994) Growth mechanism of star-shaped TiN crystals. Journal of Crystal Growth, 142 (1). 117-123 doi:10.1016/0022-0248(94)90277-1
Mehta, R.V., Jagannathan, R. (1994) Cooperative growth mechanism of plate-like FCC crystals. Journal of Crystal Growth, 142 (3). 403-405 doi:10.1016/0022-0248(94)90354-9
Sato, Michio (1994) Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2. Journal of Crystal Growth, 145 (1). 99-103 doi:10.1016/0022-0248(94)91035-9
Louchev, Oleg A. (1994) Diffusion, heat transfer, equilibrium molecular density and kinetic mechanism of morphological instability in physical vapor deposition. Journal of Crystal Growth, 140 (1). 219-236 doi:10.1016/0022-0248(94)90516-9
Piechotka, M. (1995) Mechanism of vapour growth and defect formation in large mercuric iodide crystals. Journal of Crystal Growth, 146 (1). 1-8 doi:10.1016/0022-0248(94)00479-x
 
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