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Ozawa, Tetsuo, Hayakawa, Yasuhiro, Kumagawa, Masashi (1991) Interface instability in the growth of Ga1-xInxAsySb1-y and thermodynamic considerations. Journal of Crystal Growth, 115 (1). 728-732 doi:10.1016/0022-0248(91)90835-s

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Reference TypeJournal (article/letter/editorial)
TitleInterface instability in the growth of Ga1-xInxAsySb1-y and thermodynamic considerations
JournalJournal of Crystal Growth
AuthorsOzawa, TetsuoAuthor
Hayakawa, YasuhiroAuthor
Kumagawa, MasashiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90835-sSearch in ResearchGate
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Mindat Ref. ID2804355Long-form Identifiermindat:1:5:2804355:3
GUID0
Full ReferenceOzawa, Tetsuo, Hayakawa, Yasuhiro, Kumagawa, Masashi (1991) Interface instability in the growth of Ga1-xInxAsySb1-y and thermodynamic considerations. Journal of Crystal Growth, 115 (1). 728-732 doi:10.1016/0022-0248(91)90835-s
Plain TextOzawa, Tetsuo, Hayakawa, Yasuhiro, Kumagawa, Masashi (1991) Interface instability in the growth of Ga1-xInxAsySb1-y and thermodynamic considerations. Journal of Crystal Growth, 115 (1). 728-732 doi:10.1016/0022-0248(91)90835-s
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

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Ozawa, T., Hayakawa, Y., Kumagawa, M. (1991) Growth of III–V ternary and quaternary mixed crystals by the rotationary Bridgman method. Journal of Crystal Growth, 109 (1). 212-217 doi:10.1016/0022-0248(91)90180-d
Kumagawa, Masashi, Ozawa, Tetsuo, Hayakawa, Yasuhiro (1988) A new technique for the growth of III-V mixed crystal layers. Applied Surface Science, 33. 611-618 doi:10.1016/0169-4332(88)90359-5
Hayakawa, Yasuhiro, Hamakawa, Emi, Koyama, Tadanobu, Kumagawa, Masashi (1996) Rapid diffusion of Ga into InSb and precipitation of In. Journal of Crystal Growth, 163 (3). 220-225 doi:10.1016/0022-0248(95)00977-9
Murakami, Noriaki, Hikida, Takuya, Konno, Akiko, Arafune, Kouji, Koyama, Tadanobu, Momose, Yoshimi, Ozawa, Tetsuo, Miyazawa, Masafumi, Kumagawa, Masashi, Hayakawa, Yasuhiro (2008) Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed. Journal of Crystal Growth, 310 (7). 1433-1437 doi:10.1016/j.jcrysgro.2007.11.067
Ozawa, T., Ando, M., Hayakawa, Y., Kumagawa, M. (1996) InGaAs mixed crystals grown by the temperature-difference method and the numerical analysis of solution convection. Journal of Crystal Growth, 166 (1). 463-468 doi:10.1016/0022-0248(95)00888-8
Muranoi, Tetsuo (1991) PL and SIMS of vapor phase epitaxial ZnSe films. Journal of Crystal Growth, 115 (1). 679-682 doi:10.1016/0022-0248(91)90826-q
Karouta, F., Marbeuf, A., Joullié, A., Fan, J.H. (1986) Low temperature phase diagram of the Ga1−xInxAsySb1−y system. Journal of Crystal Growth, 79 (1). 445-450 doi:10.1016/0022-0248(86)90475-6
(1991) Editorial Board. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90703-8
(1991) Editors' preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90705-a
Shima, Masashi, Tanishiro, Yasumasa, Kobayashi, Kunio, Yagi, Katsumichi (1991) UHV-REM study of homoepitaxial growth of Si. Journal of Crystal Growth, 115 (1). 359-364 doi:10.1016/0022-0248(91)90768-z
Ozawa, T., Hayakawa, Y., Balakrishnan, K., Kumagawa, M. (2002) Numerical simulation of effect of ampoule rotation for the growth of InGaSb by rotational Bridgman method. Journal of Crystal Growth, 237. 1692-1696 doi:10.1016/s0022-0248(01)02332-6
 
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