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Tsuda, Minoru, Oikawa, Setsuko, Furukawa, Shinji (1991) Epitaxial growth mechanism at SB steps of Si(001) surfaces by photo-induced Si(1D) atoms. Journal of Crystal Growth, 115 (1). 556-560 doi:10.1016/0022-0248(91)90804-e

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth mechanism at SB steps of Si(001) surfaces by photo-induced Si(1D) atoms
JournalJournal of Crystal Growth
AuthorsTsuda, MinoruAuthor
Oikawa, SetsukoAuthor
Furukawa, ShinjiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90804-eSearch in ResearchGate
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Mindat Ref. ID2804172Long-form Identifiermindat:1:5:2804172:2
GUID0
Full ReferenceTsuda, Minoru, Oikawa, Setsuko, Furukawa, Shinji (1991) Epitaxial growth mechanism at SB steps of Si(001) surfaces by photo-induced Si(1D) atoms. Journal of Crystal Growth, 115 (1). 556-560 doi:10.1016/0022-0248(91)90804-e
Plain TextTsuda, Minoru, Oikawa, Setsuko, Furukawa, Shinji (1991) Epitaxial growth mechanism at SB steps of Si(001) surfaces by photo-induced Si(1D) atoms. Journal of Crystal Growth, 115 (1). 556-560 doi:10.1016/0022-0248(91)90804-e
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Tsuda, Minoru, Oikawa, Setsuko, Morishita, Mutsuo, Mashita, Masao (1990) Atomic layer epitaxial growth mechanism of a gallium layer on the (100) As surface of GaAs crystals in MOVPE. Journal of Crystal Growth, 99 (1). 545-549 doi:10.1016/0022-0248(90)90580-e
Oikawa, Setsuko, Tsuda, Minoru, Morishita, Mutsuo, Mashita, Masao, Kuniya, Yasuo (1988) Elementary process of the thermal decomposition of alkyl gallium. Journal of Crystal Growth, 91 (4). 471-480 doi:10.1016/0022-0248(88)90114-5
Suzuki, Takayuki, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1991) Growth mechanism of GaP on Si substrate by MOVPE. Journal of Crystal Growth, 115 (1). 158-163 doi:10.1016/0022-0248(91)90731-j
Hata, Masayuki, Ohara, Ghika, Oikawa, Setsuko, Tsuda, Minoru (1994) SB step growth mechanism on the reconstructed (001) surface: cluster migrations at the growing edge. Applied Surface Science, 75. 21-26 doi:10.1016/0169-4332(94)90130-9
Tsuda, Minoru., Nakajima, Mitsuo., Oikawa, Setsuko. (1986) Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasma. Journal Of The American Chemical Society, 108 (19) 5780-5783 doi:10.1021/ja00279a019
Tsuda, Minoru, Hata, Masayuki, Shin-no, Yukiko, Oikawa, Setsuko (1996) Adatom migration mechanism at SA steps on (001) surfaces of diamond structure crystals. Surface Science, 357. 844-848 doi:10.1016/0039-6028(96)00275-0
Kinoshita, S., Suzuki, Y., Nishinaga, T. (1991) Epitaxial lateral overgrowth of Si on non-planar substrate. Journal of Crystal Growth, 115 (1). 561-566 doi:10.1016/0022-0248(91)90805-f
Urano, T., Sakaue, K., Nagano, K., Hongo, S., Kanaji, T. (1991) Adsorption structure of K on Si(001) at various coverages. Journal of Crystal Growth, 115 (1). 411-417 doi:10.1016/0022-0248(91)90777-3
Cheng, H.C., Juang, M.H. (1991) Growth of single-crystalline CoSi2 on (111)Si at low annealing temperatures by a nonultrahigh vacuum method. Journal of Crystal Growth, 115 (1). 572-578 doi:10.1016/0022-0248(91)90807-h
Kakishita, Kazuhiko, Ikeda, Shusaku, Suda, Toshikazu (1991) Zn3P2 epitaxial growth by MOCVD. Journal of Crystal Growth, 115 (1). 793-797 doi:10.1016/0022-0248(91)90847-x
Grundmann, M., Krost, A., Bimberg, D. (1991) Antiphase-domain-free InP on Si(001): optimization of MOCVD process. Journal of Crystal Growth, 115 (1). 150-153 doi:10.1016/0022-0248(91)90729-o
 
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