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Ohshita, Yoshio, Uesugi, Fumihiko, Nishiyama, Iwao (1991) Reaction of Si2H2 molecule on a silicon surface. Journal of Crystal Growth, 115 (1). 551-555 doi:10.1016/0022-0248(91)90803-d

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Reference TypeJournal (article/letter/editorial)
TitleReaction of Si2H2 molecule on a silicon surface
JournalJournal of Crystal Growth
AuthorsOhshita, YoshioAuthor
Uesugi, FumihikoAuthor
Nishiyama, IwaoAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90803-dSearch in ResearchGate
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Mindat Ref. ID2804166Long-form Identifiermindat:1:5:2804166:1
GUID0
Full ReferenceOhshita, Yoshio, Uesugi, Fumihiko, Nishiyama, Iwao (1991) Reaction of Si2H2 molecule on a silicon surface. Journal of Crystal Growth, 115 (1). 551-555 doi:10.1016/0022-0248(91)90803-d
Plain TextOhshita, Yoshio, Uesugi, Fumihiko, Nishiyama, Iwao (1991) Reaction of Si2H2 molecule on a silicon surface. Journal of Crystal Growth, 115 (1). 551-555 doi:10.1016/0022-0248(91)90803-d
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Ohshita, Yoshio, Ishitani, Akihiko, Takada, Toshikazu (1991) Surface reaction mechanism of SiCl2 with carrier gas H2 in silicon vapor phase epitaxial growth. Journal of Crystal Growth, 108 (3). 499-507 doi:10.1016/0022-0248(91)90227-v
Ohshita, Yoshio (1991) Theoretical studies on CH2 adsorption process in β-SiC vapor phase epitaxial growth. Journal of Crystal Growth, 110 (3). 516-522 doi:10.1016/0022-0248(91)90288-g
(1991) Editors' preface. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90705-a
Maki, Kunisuke, Shigeta, Yukichi, Kuroda, Toshio (1991) Critical thickness for growth of epitaxial grains in silicon film deposited on superlattice surface of silicon (111). Journal of Crystal Growth, 115 (1). 567-571 doi:10.1016/0022-0248(91)90806-g
(1991) Editorial Board. Journal of Crystal Growth, 115 (1). doi:10.1016/0022-0248(91)90703-8
Gardeniers, J.G.E., Giling, L.J. (1991) Vapour growth of silicon: growth anisotropy and adsorption. Journal of Crystal Growth, 115 (1). 542-550 doi:10.1016/0022-0248(91)90802-c
Morita, Yoshio, Narusawa, Tadashi (1991) Growth and characterization of Cu-Al-Se system by MBE. Journal of Crystal Growth, 115 (1). 811-815 doi:10.1016/0022-0248(91)90851-u
Arima, Yoshiyasu, Irisawa, Toshiharu (1991) Influence of surface diffusion on the structure of growing crystal surface. Journal of Crystal Growth, 115 (1). 428-432 doi:10.1016/0022-0248(91)90780-9
Ishitani, Akihiko, Ohshita, Yoshio, Takada, Toshikazu (1990) SiCl2(X̃1A1 → Ã1B1) photo-assisted epitaxy of silicon. Journal of Crystal Growth, 99 (1). 506-509 doi:10.1016/0022-0248(90)90572-3
(1991) Author index. Journal of Crystal Growth, 115 (1). 836-845 doi:10.1016/0022-0248(91)90856-z
(1991) Subject index. Journal of Crystal Growth, 115 (1). 846-849 doi:10.1016/0022-0248(91)90857-2
 
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