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Nakamura, F., Taira, K., Funato, K., Kawai, H. (1991) Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe. Journal of Crystal Growth, 115 (1). 474-478 doi:10.1016/0022-0248(91)90789-8

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Reference TypeJournal (article/letter/editorial)
TitleSe and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe
JournalJournal of Crystal Growth
AuthorsNakamura, F.Author
Taira, K.Author
Funato, K.Author
Kawai, H.Author
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90789-8Search in ResearchGate
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Mindat Ref. ID2804081Long-form Identifiermindat:1:5:2804081:1
GUID0
Full ReferenceNakamura, F., Taira, K., Funato, K., Kawai, H. (1991) Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe. Journal of Crystal Growth, 115 (1). 474-478 doi:10.1016/0022-0248(91)90789-8
Plain TextNakamura, F., Taira, K., Funato, K., Kawai, H. (1991) Se and Te doping in LP-MOCVD-grown GaSb using H2Se and DETe. Journal of Crystal Growth, 115 (1). 474-478 doi:10.1016/0022-0248(91)90789-8
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

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Taira, K., Nakamura, F., Hase, I., Kawai, H., Mori, Y. (1991) InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 107 (1). 952-955 doi:10.1016/0022-0248(91)90586-t
Taira, K., Funato, K., Nakamura, F., Kawai, H. (1991) InAs quantum‐well‐base InAs/GaSb hot‐electron transistors. Journal of Applied Physics, 69 (8). 4454-4456 doi:10.1063/1.348378
Wolf, T., Krost, A., Bimberg, D., Reier, F., Harde, P., Winterfeld, J., Schumann, H. (1991) Transition metal doping of LP-MOCVD-grown InP. Journal of Crystal Growth, 107 (1). 381-385 doi:10.1016/0022-0248(91)90490-v
Funato, K., Taira, K., Nakamura, F., Kawai, H. (1991) Thermionic emission of Γ andLelectrons in the GaSb/InAs hot‐electron transistors. Applied Physics Letters, 59 (14). 1714-1716 doi:10.1063/1.106227
Fujita, K., Shiba, Y., Asai, K. (1991) MOCVD growth of GaAs on Si using (Al,In) GaAs/GaAs buffer layer. Journal of Crystal Growth, 107 (1). 473-478 doi:10.1016/0022-0248(91)90505-y
Sun, S.Z., Armour, E.A., Zheng, K., Schaus, C.F. (1991) Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD. Journal of Crystal Growth, 113 (1). 103-112 doi:10.1016/0022-0248(91)90014-v
Nakamura, Fumihiko, Kawai, Hiroji (1988) Uniform (Al)GaAs crystal growth and microwave HIFETs grown by barrel-reactor MOCVD. Journal of Crystal Growth, 93 (1). 292-300 doi:10.1016/0022-0248(88)90542-8
Katahama, H., Matsuda, Y., Shiba, Y., Fujita, K. (1991) Raman scattering study on the first step growth of GaAs on Si grown by MOCVD. Journal of Crystal Growth, 115 (1). 141-144 doi:10.1016/0022-0248(91)90727-m
Chen, J.F., Cho, A.Y. (1991) Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe. Journal of Crystal Growth, 111 (1). 619-622 doi:10.1016/0022-0248(91)91051-b
Ebe, H., Sawada, A., Maruyama, K., Nishijima, Y., Shinohara, K., Takigawa, H. (1991) Tilt growth of CdTe epilayers on sapphire substrates by MOCVD. Journal of Crystal Growth, 115 (1). 718-722 doi:10.1016/0022-0248(91)90833-q
Musolf, J., Marx, D., Kohl, A., Weyers, M., Balk, P. (1991) Doping of GaAs and InP in MOMBE using DEZn, TESn and DETe. Journal of Crystal Growth, 107 (1). 1043-1044 doi:10.1016/0022-0248(91)90602-2
 
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