登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Weyers, Markus, Sato, Michio (1991) Growth of GaP by MOVPE at very low pressure: kinetics and carbon incorporation. Journal of Crystal Growth, 115 (1). 469-473 doi:10.1016/0022-0248(91)90788-7

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleGrowth of GaP by MOVPE at very low pressure: kinetics and carbon incorporation
JournalJournal of Crystal Growth
AuthorsWeyers, MarkusAuthor
Sato, MichioAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90788-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2804075Long-form Identifiermindat:1:5:2804075:0
GUID0
Full ReferenceWeyers, Markus, Sato, Michio (1991) Growth of GaP by MOVPE at very low pressure: kinetics and carbon incorporation. Journal of Crystal Growth, 115 (1). 469-473 doi:10.1016/0022-0248(91)90788-7
Plain TextWeyers, Markus, Sato, Michio (1991) Growth of GaP by MOVPE at very low pressure: kinetics and carbon incorporation. Journal of Crystal Growth, 115 (1). 469-473 doi:10.1016/0022-0248(91)90788-7
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Jones, A.C., Rushworth, S.A. (1991) Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane. Journal of Crystal Growth, 107 (1). 350pp. doi:10.1016/0022-0248(91)90483-l
Suzuki, Takayuki, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi (1991) Growth mechanism of GaP on Si substrate by MOVPE. Journal of Crystal Growth, 115 (1). 158-163 doi:10.1016/0022-0248(91)90731-j
Ogasawara, M., Kamada, H., Imamura, Y. (1991) Characterization of InP grown by low-pressure MOVPE using ethyldimethylindium and tertiarybutylphosphine. Journal of Crystal Growth, 115 (1). 254-260 doi:10.1016/0022-0248(91)90748-t
Sato, Michio, Kobayashi, Naoki, Horikoshi, Yoshiji (1991) Effect of precracking of organometallics and arsine on growth of GaAs. Journal of Crystal Growth, 115 (1). 221-225 doi:10.1016/0022-0248(91)90742-n
Anayama, Chikashi, Tanahashi, Toshiyuki, Nakajima, Kazuo (1991) Selective embedded growth of GaAs by MOVPE. Journal of Crystal Growth, 115 (1). 65-68 doi:10.1016/0022-0248(91)90713-f
Nishio, Mitsuhiro, Ogawa, Hiroshi, Yoshida, Akira (1991) Effect of Ar laser-illumination upon ZnTe growth in atmospheric-pressure MOVPE. Journal of Crystal Growth, 115 (1). 284-288 doi:10.1016/0022-0248(91)90754-s
Kayser, O., Opitz, B., Westphalen, R., Niggebrügge, U., Schneider, K., Balk, P. (1991) Selective embedded growth of GaInAs by low pressure MOVPE. Journal of Crystal Growth, 107 (1). 141-146 doi:10.1016/0022-0248(91)90446-c
Yoshioka, Yasushi, Yoda, Hiroki, Kasuga, Masanobu (1991) Homo-epitaxial growth of CdTe by sublimation under low pressure. Journal of Crystal Growth, 115 (1). 705-710 doi:10.1016/0022-0248(91)90831-o
Frijlink, P.M., Nicolas, J.L., Ambrosius, H.P.M.M., Linders, R.W.M., Waucquez, C., Marchal, J.M. (1991) The radial flow planetary reactor: low pressure versus atmospheric pressure MOVPE. Journal of Crystal Growth, 115 (1). 203-210 doi:10.1016/0022-0248(91)90739-r
Triboulet, R. (1991) MOVPE of narrow band gap II–VI materials. Journal of Crystal Growth, 107 (1). 598-604 doi:10.1016/0022-0248(91)90527-c
Sato, Michio (1994) Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N2. Journal of Crystal Growth, 145 (1). 99-103 doi:10.1016/0022-0248(94)91035-9
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.6 15:32:45
Go to top of page