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Matsumura, Nobuo, Senga, Ken-ichi, Kakuta, Jun, Fukada, Takashi, Saraie, Junji (1991) Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology. Journal of Crystal Growth, 115 (1). 279-283 doi:10.1016/0022-0248(91)90753-r

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Reference TypeJournal (article/letter/editorial)
TitleStudy on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology
JournalJournal of Crystal Growth
AuthorsMatsumura, NobuoAuthor
Senga, Ken-ichiAuthor
Kakuta, JunAuthor
Fukada, TakashiAuthor
Saraie, JunjiAuthor
Year1991 (December)Volume115
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90753-rSearch in ResearchGate
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Mindat Ref. ID2803871Long-form Identifiermindat:1:5:2803871:9
GUID0
Full ReferenceMatsumura, Nobuo, Senga, Ken-ichi, Kakuta, Jun, Fukada, Takashi, Saraie, Junji (1991) Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology. Journal of Crystal Growth, 115 (1). 279-283 doi:10.1016/0022-0248(91)90753-r
Plain TextMatsumura, Nobuo, Senga, Ken-ichi, Kakuta, Jun, Fukada, Takashi, Saraie, Junji (1991) Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology. Journal of Crystal Growth, 115 (1). 279-283 doi:10.1016/0022-0248(91)90753-r
In(1991, December) Journal of Crystal Growth Vol. 115 (1) Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Matsumura, Nobuo, Senga, Ken-ichi, Kakuta, Jun, Saraie, Junji (1992) Reflection high energy electron diffraction study on adatom desorption from ZnSe surface under electron beam irradiation and light irradiation. Journal of Crystal Growth, 117 (1). 129-133 doi:10.1016/0022-0248(92)90730-7
Matsumura, Nobuo, Senga, Ken-ichi, Yamashita, Yoshihiro, Ichikawa, Susumu, Saraie, Junji (1993) Light irradiation effects on impurity doping in ZnSe by photoassisted molecular beam epitaxy. Journal of Crystal Growth, 127 (1). 343-346 doi:10.1016/0022-0248(93)90635-a
Matsumura, N., Fukada, T., Senga, K., Fukushima, Y., Saraie, J. (1991) Photo-assisted MBE growth of ZnSe on GaAs substrates. Journal of Crystal Growth, 111 (1). 787-791 doi:10.1016/0022-0248(91)91082-l
Matsumura, Nobuo, Fukada, Takashi, Saraie, Junji (1990) Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameter. Journal of Crystal Growth, 101 (1). 61-66 doi:10.1016/0022-0248(90)90937-g
Fukada, Takashi, Matsumura, Nobuo, Fukushima, Yasumori, Saraie, Junji (1990) Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1585
Ichikawa, S., Matsumura, N., Yamawaki, K., Senga, K., Saraie, J. (1994) Migration enhancement on ZnSe surface in photoassisted molecular beam epitaxy and long duration time of the effects. Journal of Crystal Growth, 138 (1). 14-18 doi:10.1016/0022-0248(94)90773-0
Matsumura, Nobuo, Tsubokura, Mitsutaka, Saraie, Junji, Yodogawa, Yutaka (1988) MBE growth of high quality lattice-matched ZnSxSe1-x on GaAs substrates. Journal of Crystal Growth, 86 (1). 311-317 doi:10.1016/0022-0248(90)90735-4
Matsumura, Nobuo, Tsubokura, Mitsutaka, Saraie, Junji (1989) Lattice strain and its effects on energy band structure in MBE-ZnSxSe1−x/GaAs. Journal of Crystal Growth, 95 (1). 525-528 doi:10.1016/0022-0248(89)90458-2
Matsumura, Nobuo, Saito, Takashi, Saraie, Junji (2001) Photoluminescence of self-assembled CdSe quantum dots by molecular beam epitaxy. Journal of Crystal Growth, 227. 1121-1125 doi:10.1016/s0022-0248(01)01000-4
Takahashi, Koji, Nishino, Shigehiro, Saraie, Junji (1991) Effect of acceptor impurity addition in low temperature growth of 3C-SiC. Journal of Crystal Growth, 115 (1). 617-622 doi:10.1016/0022-0248(91)90814-l
Matsumura, Nobuo, Ohshima, Takefumi, Saraie, Junji, Yodogawa, Yutaka (1985) Preparation of CdTe thin films on Ge substrates by molecular beam epitaxy. Journal of Crystal Growth, 71 (2). 361-370 doi:10.1016/0022-0248(85)90092-2
 
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