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Tiwari, A.N., Floeder, W., Blunier, S., Zogg, H., Proctor, M.J. (1991) Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers. Journal of Crystal Growth, 111 (1). 730-735 doi:10.1016/0022-0248(91)91071-h

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers
JournalJournal of Crystal Growth
AuthorsTiwari, A.N.Author
Floeder, W.Author
Blunier, S.Author
Zogg, H.Author
Proctor, M.J.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)91071-hSearch in ResearchGate
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Mindat Ref. ID2801372Long-form Identifiermindat:1:5:2801372:9
GUID0
Full ReferenceTiwari, A.N., Floeder, W., Blunier, S., Zogg, H., Proctor, M.J. (1991) Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers. Journal of Crystal Growth, 111 (1). 730-735 doi:10.1016/0022-0248(91)91071-h
Plain TextTiwari, A.N., Floeder, W., Blunier, S., Zogg, H., Proctor, M.J. (1991) Heteroepitaxy of CdTe(100) on Si(100) using BaF2−CaF2(100) buffer layers. Journal of Crystal Growth, 111 (1). 730-735 doi:10.1016/0022-0248(91)91071-h
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

See Also

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Tiwari, A. N., Floeder, W., Blunier, S., Zogg, H., Weibel, H. (1990) Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2as a buffer. Applied Physics Letters, 57 (11). 1108-1110 doi:10.1063/1.103506
Tiwari, A. N., Blunier, S., Zogg, H. (1992) Study of As‐doping and surface reconstructions in molecular beam epitaxy grown CdTe(100) on BaF2‐CaF2/Si(100). Applied Physics Letters, 60 (5). 621-623 doi:10.1063/1.106573
Tiwari, A.N., Freundlich, A., Beaumont, B., Blunier, S., Zogg, H., Teodoropol, S., Vèrié, C. (1992) Metalorganic vapor phase epitaxy of GaAs on Si using IIa-flouride buffer layers. Journal of Crystal Growth, 124 (1). 565-569 doi:10.1016/0022-0248(92)90518-n
Zogg, H., Maier, P., Melchior, H. (1987) Graded IIa fluoride buffer layers for heteroepitaxy of lead chalcogenides and CdTe on Si. Journal of Crystal Growth, 81 (1). 543-544 doi:10.1016/0022-0248(87)90450-7
Zogg, H., Maier, P., Melchior, H. (1987) Graded Ila-fluoride buffer layers for heteroepitaxy of lead chalcogenides and CdTe on Si. Journal of Crystal Growth, 80 (2). 408-416 doi:10.1016/0022-0248(87)90089-3
Kiselev, A.N., Velichko, A.A., Okomelchenko, I.A. (1993) High-resolution electron microscopy of epitaxial layers and interfaces in the CaF2/Si(100) and CaF2/Si/CaF2/Si(100) heterosystems. Journal of Crystal Growth, 129 (1). 163-172 doi:10.1016/0022-0248(93)90445-3
Blunier, S., Zogg, H., Weibel, H. (1988) Growth of lattice‐mismatched stacked epitaxial CaF2‐SrF2‐BaF2layers on (100) oriented Si substrates. Applied Physics Letters, 53 (16). 1512-1514 doi:10.1063/1.100432
Zogg, H., Maissen, C., Blunier, S., Teodoropol, S., Overney, R.M., Richmond, T., Haefke, H. (1993) Strain relaxation morphologies of IIa-fluorides and lead-chalcogenide layers on Si(111). Journal of Crystal Growth, 127 (1). 668-671 doi:10.1016/0022-0248(93)90707-4
Tiwari, A. N., Blunier, S., Zogg, H., Lerch, Ph., Marcenat, F., Martinoli, P. (1992) Epitaxial growth of superconducting YBa2Cu3O7−xon Si(100) with CaF2as intermediate buffer. Journal of Applied Physics, 71 (10). 5095-5098 doi:10.1063/1.350611
Doucette, L.D., Christensen, T.M., DeSisto, W.J., Lad, R.J. (2006) CrO2 (100) and TiO2 (100) film heteroepitaxy on a BaF2 (111)/Si (100) substrate. Journal of Crystal Growth, 290 (2). 653-659 doi:10.1016/j.jcrysgro.2006.01.040
McCann, Patrick J., Fonstad, Clifton G. (1991) Liquid phase epitaxial growth of PbSe on (111) and (100) BaF2. Journal of Crystal Growth, 114 (4). 687-692 doi:10.1016/0022-0248(91)90417-4
 
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