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Lansari, Y., Yang, Z., Hwang, S., Reed, F.E., Sowers, A.T., Cook, J.W., Schetzina, J.F. (1991) Very low temperature growth and doping of Hg-based epilayers and superlattices. Journal of Crystal Growth, 111 (1). 720-724 doi:10.1016/0022-0248(91)91069-m

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Reference TypeJournal (article/letter/editorial)
TitleVery low temperature growth and doping of Hg-based epilayers and superlattices
JournalJournal of Crystal Growth
AuthorsLansari, Y.Author
Yang, Z.Author
Hwang, S.Author
Reed, F.E.Author
Sowers, A.T.Author
Cook, J.W.Author
Schetzina, J.F.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)91069-mSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID2801360Long-form Identifiermindat:1:5:2801360:4
GUID0
Full ReferenceLansari, Y., Yang, Z., Hwang, S., Reed, F.E., Sowers, A.T., Cook, J.W., Schetzina, J.F. (1991) Very low temperature growth and doping of Hg-based epilayers and superlattices. Journal of Crystal Growth, 111 (1). 720-724 doi:10.1016/0022-0248(91)91069-m
Plain TextLansari, Y., Yang, Z., Hwang, S., Reed, F.E., Sowers, A.T., Cook, J.W., Schetzina, J.F. (1991) Very low temperature growth and doping of Hg-based epilayers and superlattices. Journal of Crystal Growth, 111 (1). 720-724 doi:10.1016/0022-0248(91)91069-m
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

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Ren, J., Bowers, K.A., Hwang, S., Cook, J.W., Schetzina, J.F. (1991) Substitutional doping of ZnSe films. Journal of Crystal Growth, 111 (1). 772-775 doi:10.1016/0022-0248(91)91079-p
Schetzina, J.F., Han, J.W., Lansari, Y., Giles, N.C., Yang, Z., Hwang, S., Cook, J.W., Otsuka, N. (1990) Modulation-doped HgCdTe quantum well structures and superlattices grown by photoassisted molecular beam epitaxy. Journal of Crystal Growth, 101 (1). 23-32 doi:10.1016/0022-0248(90)90931-a
Ren, J., Bowers, K.A., Sneed, B., Reed, F.E., Cook, J.W., Schetzina, J.F. (1991) Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodes. Journal of Crystal Growth, 111 (1). 829-832 doi:10.1016/0022-0248(91)91091-n
Ren, J., Eason, D.B., Churchill, L.E., Yu, Z., Boney, C., Cook, J.W., Schetzina, J.F., El-Masry, N.A. (1994) Integrated heterostructure devices composed of II–VI materials with Hg-based contact layers. Journal of Crystal Growth, 138 (1). 455-463 doi:10.1016/0022-0248(94)90850-8
Klem, J.F., Kurtz, S.R., Datye, A. (1991) Growth and properties of GaAsSb/InGaAs superlattices on InP. Journal of Crystal Growth, 111 (1). 628-632 doi:10.1016/0022-0248(91)91053-d
Harris, K. A., Hwang, S., Lansari, Y., Cook, J. W., Schetzina, J. F. (1986) Growth and properties of dilute magnetic semiconductor superlattices containing Hg1−xMnxTe. Applied Physics Letters, 49 (12). 713-715 doi:10.1063/1.97576
Ramesh, S., Kobayashi, N., Horikoshi, Y. (1991) High-quality ZnSe/GaAs superlattices: MEE growth, and structural and optical characterization. Journal of Crystal Growth, 111 (1). 752-756 doi:10.1016/0022-0248(91)91075-l
(1991) Preface. Journal of Crystal Growth, 111 (1). doi:10.1016/0022-0248(91)90937-z
Vaudo, R.P., Cook, J.W., Schetzina, J.F. (1994) Atomic nitrogen production in nitrogen-plasma sources used for the growth of ZnSe : N and related alloys by molecular-beam epitaxy. Journal of Crystal Growth, 138 (1). 430-436 doi:10.1016/0022-0248(94)90846-x
Eason, D., Ren, J., Yu, Z., Hughes, C., Cook, J.W., Schetzina, J.F., El-Masry, N.A., Cantwell, Gene, Harsh, William C. (1995) Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates. Journal of Crystal Growth, 150. 718-724 doi:10.1016/0022-0248(95)80034-a
Eberl, K., Wegscheider, W., Abstreiter, G. (1991) Group IV element (Si, Ge and α-Sn) superlattices — low temperature MBE. Journal of Crystal Growth, 111 (1). 882-888 doi:10.1016/0022-0248(91)91101-f
 
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