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Yano, Mitsuaki, Yokose, Hisakazu, Iwai, Yoshio, Inoue, Masataka (1991) Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams. Journal of Crystal Growth, 111 (1). 609-613 doi:10.1016/0022-0248(91)91049-g

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Reference TypeJournal (article/letter/editorial)
TitleSurface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams
JournalJournal of Crystal Growth
AuthorsYano, MitsuakiAuthor
Yokose, HisakazuAuthor
Iwai, YoshioAuthor
Inoue, MasatakaAuthor
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)91049-gSearch in ResearchGate
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Mindat Ref. ID2801232Long-form Identifiermindat:1:5:2801232:2
GUID0
Full ReferenceYano, Mitsuaki, Yokose, Hisakazu, Iwai, Yoshio, Inoue, Masataka (1991) Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams. Journal of Crystal Growth, 111 (1). 609-613 doi:10.1016/0022-0248(91)91049-g
Plain TextYano, Mitsuaki, Yokose, Hisakazu, Iwai, Yoshio, Inoue, Masataka (1991) Surface reaction of III–V compound semiconductors irradiated by As and Sb molecular beams. Journal of Crystal Growth, 111 (1). 609-613 doi:10.1016/0022-0248(91)91049-g
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

See Also

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Yano, Mitsuaki, Yoh, Kanji, Iwawaki, Takanori, Iwai, Yoshio, Inoue, Masataka (1991) Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy. Journal of Crystal Growth, 111 (1). 397-401 doi:10.1016/0022-0248(91)91008-x
Yoh, Kanji, Moriuchi, Toshiaki, Yano, Mitsuaki, Inoue, Masataka (1991) Electrical characteristics dependence on aluminum mole fraction in (Al0.5Ga0.5)Sb/InAs/(AlxGa1−x)Sb heterostructure. Journal of Crystal Growth, 111 (1). 643-646 doi:10.1016/0022-0248(91)91056-g
Yano, Mitsuaki, Furuse, Hiroshi, Iwai, Yoshio, Yoh, Kanji, Inoue, Masataka (1993) Raman scattering analysis of InAs/GaSb ultrathin-layer superlattices grown by molecular beam epitaxy. Journal of Crystal Growth, 127 (1). 807-811 doi:10.1016/0022-0248(93)90737-h
Yano, Mitsuaki, Utatsu, Takashige, Iwai, Yoshio, Inoue, Masataka (1995) A Raman scattering study on the interface sharpness of InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy. Journal of Crystal Growth, 150. 868-873 doi:10.1016/0022-0248(95)80063-i
Iwai, Yoshio, Yano, Mitsuaki, Hagiwara, Ryuzou, Inoue, Masataka (1992) Raman scattering from InAs/AlSb ultrathin-layer superlattices grown by molecular beam epitaxy. Surface Science, 267 (1). 434-437 doi:10.1016/0039-6028(92)91170-g
Yano, Mitsuaki, Okuizumi, Masaru, Iwai, Yoshio, Inoue, Masataka (1993) Molecular‐beam‐epitaxial growth and optical analysis of InAs/AlSb strained‐layer superlattices. Journal of Applied Physics, 74 (12). 7472-7480 doi:10.1063/1.354970
Yoh, Kanji, Kiyomi, Kazumasa, Yano, Mitsuaki, Inoue, Masataka (1993) Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors. Journal of Crystal Growth, 127 (1). 29-35 doi:10.1016/0022-0248(93)90571-d
Yano, Mitsuaki, Yamamoto, Kazuhiko, Utatsu, Takashige, Inoue, Masataka (1995) Time-resolved reflection high energy electron diffraction analysis for atomic layer depositions of GaSb by molecular beam epitaxy. Journal of Crystal Growth, 146 (1). 349-353 doi:10.1016/0022-0248(94)00509-5
Yano, Mitsuaki, Yamamoto, Kazuhiko, Masahara, Kou, Inoue, Masataka (1993) Characterization of AlAs/GaAs ultrathin-layer superlattices grown by migration enhanced epitaxy at low temperatures. Journal of Crystal Growth, 127 (1). 274-278 doi:10.1016/0022-0248(93)90621-3
Inoue, N. (1991) MBE monolayer growth control by in-situ electron microscopy. Journal of Crystal Growth, 111 (1). 75-82 doi:10.1016/0022-0248(91)90950-a
Munekata, H., Ohno, H., Ruf, R.R., Gambino, R.J., Chang, L.L. (1991) P-Type diluted magnetic III–V semiconductors. Journal of Crystal Growth, 111 (1). 1011-1015 doi:10.1016/0022-0248(91)91123-r
 
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