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Hata, Masayuki, Watanabe, Akiyoshi, Isu, Toshiro (1991) Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction. Journal of Crystal Growth, 111 (1). 83-87 doi:10.1016/0022-0248(91)90951-z

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Reference TypeJournal (article/letter/editorial)
TitleSurface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction
JournalJournal of Crystal Growth
AuthorsHata, MasayukiAuthor
Watanabe, AkiyoshiAuthor
Isu, ToshiroAuthor
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90951-zSearch in ResearchGate
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Mindat Ref. ID2800643Long-form Identifiermindat:1:5:2800643:7
GUID0
Full ReferenceHata, Masayuki, Watanabe, Akiyoshi, Isu, Toshiro (1991) Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction. Journal of Crystal Growth, 111 (1). 83-87 doi:10.1016/0022-0248(91)90951-z
Plain TextHata, Masayuki, Watanabe, Akiyoshi, Isu, Toshiro (1991) Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffraction. Journal of Crystal Growth, 111 (1). 83-87 doi:10.1016/0022-0248(91)90951-z
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

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Isu, Toshiro, Watanabe, Akiyoshi, Hata, Masayuki, Katayama, Yoshifumi (1990) In-situ microscopic observation of GaAs surfaces during molecular beam epitaxy and metalorganic molecular beam epitaxy by scanning microprobe reflection high energy electron diffraction. Journal of Crystal Growth, 100 (3). 433-438 doi:10.1016/0022-0248(90)90241-c
Hata, Masayuki, Isu, Toshiro, Watanabe, Akiyoshi, Kajikawa, Yasutomo, Katayama, Yoshifumi (1991) Surface diffusion and sticking coefficient of adatoms to atomic steps during molecular beam epitaxy growth. Journal of Crystal Growth, 114 (1). 203-208 doi:10.1016/0022-0248(91)90694-z
Watanabe, Akiyoshi, Hata, Masayuki, Isu, Toshiro (1991) Metalorganic molecular beam epitaxy of GaAs using hydrogen radical beam. Journal of Crystal Growth, 111 (1). 554-558 doi:10.1016/0022-0248(91)91038-c
Isu, Toshiro, Hata, Masayuki, Watanabe, Akiyoshi (1991) Real-time μ-RHEED observations of GaAs surfaces during growth with alternating source supply. Journal of Crystal Growth, 111 (1). 210-215 doi:10.1016/0022-0248(91)90973-9
Watanabe, Akiyoshi, Isu, Toshiro, Hata, Masayuki, Katayama, Yoshifumi (1991) Investigation of InP surface under arsenic pressure using RHEED-TRAXS. Journal of Crystal Growth, 115 (1). 371-374 doi:10.1016/0022-0248(91)90770-6
Isu, Toshiro, Watanabe, Akiyoshi, Hata, Masayuki, Katayama, Yoshifumi (1988) Real-Time Observation of GaAs(001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2259
Isu, Toshiro, Hata, Masayuki, Watanabe, Akiyoshi (1990) Anomalous temperature dependence of growth rate of GaAs grown by trimethylgallium and arsine molecular beams and two competing growth mechanisms. Journal of Crystal Growth, 105 (1). 209-212 doi:10.1016/0022-0248(90)90363-p
Isu, T., Hata, M., Morishita, Y., Nomura, Y., Katayama, Y. (1991) Surface diffusion length during MBE and MOMBE measured from distribution of growth rates. Journal of Crystal Growth, 115 (1). 423-427 doi:10.1016/0022-0248(91)90779-5
Hata, M., Isu, T., Watanabe, A., Katayama, Y. (1990) Real‐time observation of molecular beam epitaxy growth on mesa‐etched GaAs substrates by scanning microprobe reflection high‐energy electron diffraction. Applied Physics Letters, 56 (25). 2542-2544 doi:10.1063/1.102881
Morishita, Y., Goto, S., Nomura, Y., Isu, T., Katayama, Y. (1995) Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substrates. Journal of Crystal Growth, 150. 110-116 doi:10.1016/0022-0248(95)80191-e
Van Hove, J.M., Cohen, P.I. (1987) Reflection high energy electron diffraction measurement of surface diffusion during the growth of gallium arsenide by MBE. Journal of Crystal Growth, 81 (1). 13-18 doi:10.1016/0022-0248(87)90357-5
 
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