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Däweritz, L., Griesche, J., Hey, R., Herzog, J. (1991) Dynamics and roughness spectrum of the GaAs(001) surface during the MBE process. Journal of Crystal Growth, 111 (1). 65-69 doi:10.1016/0022-0248(91)90948-5

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Reference TypeJournal (article/letter/editorial)
TitleDynamics and roughness spectrum of the GaAs(001) surface during the MBE process
JournalJournal of Crystal Growth
AuthorsDäweritz, L.Author
Griesche, J.Author
Hey, R.Author
Herzog, J.Author
Year1991 (May)Volume111
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(91)90948-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2800628Long-form Identifiermindat:1:5:2800628:8
GUID0
Full ReferenceDäweritz, L., Griesche, J., Hey, R., Herzog, J. (1991) Dynamics and roughness spectrum of the GaAs(001) surface during the MBE process. Journal of Crystal Growth, 111 (1). 65-69 doi:10.1016/0022-0248(91)90948-5
Plain TextDäweritz, L., Griesche, J., Hey, R., Herzog, J. (1991) Dynamics and roughness spectrum of the GaAs(001) surface during the MBE process. Journal of Crystal Growth, 111 (1). 65-69 doi:10.1016/0022-0248(91)90948-5
In(1991, May) Journal of Crystal Growth Vol. 111 (1) Elsevier BV

See Also

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Crook, G.E., Tapfer, L., Däweritz, L., Cingolani, R., Ploog, K. (1991) Control of initial surface configuration for GaAs-on-Si MBE using a Si buffer layer?. Journal of Crystal Growth, 111 (1). 184-188 doi:10.1016/0022-0248(91)90968-b
McCoy, J.M., Maksym, P.A. (1991) Monte Carlo simulation of MBE growth of the 2 × 4 reconstructed GaAs(001) surface. Journal of Crystal Growth, 111 (1). 178-183 doi:10.1016/0022-0248(91)90967-a
Däweritz, L., Hey, R. (1990) Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth. Surface Science, 236 (1). 15-22 doi:10.1016/0039-6028(90)90756-x
Hey, R., Wassermeier, M., Behrend, J., Däweritz, L., Ploog, K., Raidt, H. (1995) Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy. Journal of Crystal Growth, 154 (1). 1-9 doi:10.1016/0022-0248(95)00162-x
González, Y., González, L., Briones, F. (1991) In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance difference. Journal of Crystal Growth, 111 (1). 120-124 doi:10.1016/0022-0248(91)90958-8
Däweritz, L., Hagenstein, K., Schützendübe, P. (1993) Self-organization during Si incorporation in MBE-grown vicinal GaAs(001) surfaces. Journal of Crystal Growth, 127 (1). 1051-1055 doi:10.1016/0022-0248(93)90789-y
Riechert, H., Bernklau, D., Reithmaier, J.-P., Schnell, R.D. (1991) MBE growth and post-growth annealing of GaAs-based resonant tunneling structures, viewed in relation to interface roughness. Journal of Crystal Growth, 111 (1). 1100-1104 doi:10.1016/0022-0248(91)91141-v
Paulsson, G., Deppert, K., Jeppesen, S., Jönsson, J., Samuelson, L., Schmidt, P. (1991) Reflectance-difference probing of surface kinetics of (001) GaAs during vacuum chemical epitaxy. Journal of Crystal Growth, 111 (1). 115-119 doi:10.1016/0022-0248(91)90957-7
Matsumura, N., Fukada, T., Senga, K., Fukushima, Y., Saraie, J. (1991) Photo-assisted MBE growth of ZnSe on GaAs substrates. Journal of Crystal Growth, 111 (1). 787-791 doi:10.1016/0022-0248(91)91082-l
Ralston, J.D., Wagner, J., Fuchs, F., Hiesinger, P., Schmälzlin, J. (1991) Overgrowth and strain in MBE-grown GaAs/ErAs/GaAs structures. Journal of Crystal Growth, 111 (1). 989-995 doi:10.1016/0022-0248(91)91120-y
Noda, T., Tanaka, M., Sakaki, H. (1991) Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement. Journal of Crystal Growth, 111 (1). 348-352 doi:10.1016/0022-0248(91)90999-l
 
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