Hale, M. J., Sexton, J. Z., Winn, D. L., Kummel, A. C., Erbudak, M., Passlack, M. (2004) The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4). The Journal of Chemical Physics, 120 (12). 5745-5754 doi:10.1063/1.1648016

See Also

These are possibly similar items as determined by title/reference text matching only.

	Winn, Darby L., Hale, Michael J., Grassman, Tyler J., Sexton, Jonathan Z., Kummel, Andrew C., Passlack, Matthias, Droopad, Ravi (2007) Electronic properties of adsorbates on GaAs(001)-c(2×8)∕(2×4). The Journal of Chemical Physics, 127 (13). 134705pp. doi:10.1063/1.2786097
	Hale, M. J., Yi, S. I., Sexton, J. Z., Kummel, A. C., Passlack, M. (2003) Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4). The Journal of Chemical Physics, 119 (13). 6719-6728 doi:10.1063/1.1601596
	Hale, M. J., Yi, S. I., Sexton, J. Z., Kummel, A. C., Passlack, M. (2007) Erratum: “Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)∕(2×4)” [J. Chem. Phys. 119, 6719 (2003)]. The Journal of Chemical Physics, 127 (4). 49902pp. doi:10.1063/1.2748759
	Hale, M. J., Winn, D. L., Grassman, T. J., Kummel, A. C., Droopad, R. (2005) Chemically resolved scanning tunneling microscopy imaging of Al on p-type Al0.1Ga0.9As(001)‐c(2×8)∕(2×4). The Journal of Chemical Physics, 122 (12). 124702pp. doi:10.1063/1.1846051
	Winn, Darby L., Hale, Michael J., Grassman, Tyler J., Kummel, Andrew C., Droopad, Ravi, Passlack, Matthias (2007) Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface. The Journal of Chemical Physics, 126 (8). 84703pp. doi:10.1063/1.2363183
	Shen, Jian, Chagarov, Evgueni A., Feldwinn, Darby L., Melitz, Wilhelm, Santagata, Nancy M., Kummel, Andrew C., Droopad, Ravi, Passlack, Matthias (2010) Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. The Journal of Chemical Physics, 133 (16). 164704pp. doi:10.1063/1.3497040
	Yi, S. I., Kruse, P., Hale, M., Kummel, A. C. (2001) Adsorption of atomic oxygen on GaAs(001)-(2×4) and the resulting surface structures. The Journal of Chemical Physics, 114 (7). 3215-3223 doi:10.1063/1.1340025
	Kruse, Peter, McLean, James G., Kummel, Andrew C. (2000) Chemically selective adsorption of molecular oxygen on GaAs(100)c(2×8). The Journal of Chemical Physics, 113 (20). 9224-9232 doi:10.1063/1.1315600
	Yu, Z., Overgaard, C. D., Droopad, R., Passlack, M., Abrokwah, J. K. (2003) Growth and physical properties of Ga2O3 thin films on GaAs(001) substrate by molecular-beam epitaxy. Applied Physics Letters, 82 (18). 2978-2980 doi:10.1063/1.1572478
	Sexton, J. Z., Yi, S. I., Hale, M., Kruse, P., Demkov, A. A., Kummel, A. C. (2003) Displacement of surface arsenic atoms by insertion of oxygen atoms into As–Ga backbonds. The Journal of Chemical Physics, 119 (17). 9191-9198 doi:10.1063/1.1614209
	Flaum, Harris C., Sullivan, Daniel J. D., Kummel, Andrew C. (1994) Energetics of the sticking of Cl2onto Ga‐rich GaAs(100)c(8×2), As‐rich GaAs(100)c(2×8), and stoichiometric GaAs(110)(1×1) surfaces. The Journal of Chemical Physics, 100 (2). 1634-1648 doi:10.1063/1.466591